Browsing by Author Lim, P.S.Y.

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Showing results 3 to 15 of 15 < previous 
Issue DateTitleAuthor(s)
1-Nov-2010Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser annealLim, P.S.Y.; Chi, D.Z.; Lim, P.C.; Wang, X.C.; Chan, T.K. ; Osipowicz, T. ; Yeo, Y.-C. 
2012High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drainLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Pulido, M.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
2012High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stackLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
2010III-V MOSFETs with a new self-aligned contactZhang, X.; Guo, H.; Ko, C.-H.; Wann, C.H.; Cheng, C.-C.; Lin, H.-Y.; Chin, H.-C.; Gong, X.; Lim, P.S.Y.; Luo, G.-L.; Chang, C.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Yeo., Y.-C. 
2012Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistorWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
1-Apr-2012Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatmentLim, P.S.Y.; Zhi Chi, D.; Chong Lim, P.; Yeo, Y.-C. 
7-Jan-2013NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier heightLim, P.S.Y.; Chi, D.Z.; Zhou, Q. ; Yeo, Y.-C. 
2012Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contactsTong, Y.; Liu, B.; Lim, P.S.Y.; Zhou, Q. ; Yeo, Y.-C. 
2012Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contactsTong, Y.; Liu, B.; Lim, P.S.Y.; Yeo, Y.-C. 
May-2011Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistorsZhang, X.; Guo, H.; Lin, H.-Y.; Cheng, C.-C.; Ko, C.-H.; Wann, C.H.; Luo, G.-L.; Chang, C.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Chin, H.-C.; Gong, X.; Koh, S.-M.; Lim, P.S.Y.; Yeo, Y.-C. 
2010Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETsZhang, X.; Guo, H.; Chin, H.-C.; Gong, X.; Lim, P.S.Y.; Yeo, Y.-C. 
2011Silicidation using nickel and Dysprosium stack on Si(100): NiSi 2 formation and impact on Schottky Barrier HeightLim, P.S.Y.; Zhou, Q. ; Chi, D.; Yeo, Y.-C. 
2012Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETsWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Liu, B.; Kong, E.Y.-J.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C.