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	Issue Date	Title	Author(s)
	2012	Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials	Wang, W.; Loke, D.; Shi, L.; Zhao, R.; Yang, H.; Law, L.-T.; Ng, L.-T.; Lim, K.-G.; Yeo, Y.-C. ; Chong, T.-C.; Lacaita, A.L.
	Feb-2007	Interface technology of ultra-low flying height and highly stable head-disk interface for perpendicular magnetic recording	Li, H. ; Liu, J. ; Liu, B.; Zhang, M.; Gonzaga, L.; Chong, T.-C.
	Aug-2003	Laser-Ablation-Induced Concentric Ring Structures	Lan, B.; Hong, M.-H.; Chen, S.-X. ; Ye, K.-D.; Wang, Z.-B.; Chen, G.-X. ; Chong, T.-C.
	2011	Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology	Fang, L.W.-W.; Zhao, R.; Yeo, E.-G.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C.
	May-2011	Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction	Fang, L.W.-W.; Zhao, R.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C.
	2008	Photoemission study of energy band alignment of Ge2Sb 2Te5 and common CMOS materials	Fang, L.W.-W.; Pan, J.-S.; Lim, A.E.-J.; Lee, R.T.-P. ; Li, M.; Zhao, R.; Shi, L.; Chong, T.-C.; Yeo, Y.-C.
	13-Dec-2010	Superlatticelike dielectric as a thermal insulator for phase-change random access memory	Loke, D.; Shi, L.; Wang, W.; Zhao, R.; Ng, L.-T.; Lim, K.-G.; Yang, H.; Chong, T.-C.; Yeo, Y.-C.
	24-Jun-2011	Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures	Loke, D.; Shi, L.; Wang, W.; Zhao, R.; Yang, H.; Ng, L.-T.; Lim, K.-G.; Chong, T.-C.; Yeo, Y.-C.

Showing results 3 to 10 of 10 < previous