Browsing by Author Cheng, C.F.

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Showing results 2 to 10 of 10 < previous 
Issue DateTitleAuthor(s)
2004A novel program-erasable capacitor using high-κ AlN dielectricLai, C.H.; Ma, M.W.; Cheng, C.F.; Chin, A.; McAlister, S.P.; Zhu, C.X. ; Li, M.-F. ; Kwong, D.L.
Mar-2005A novel program-erasable high-k AlN-Si MIS capacitorLai, C.H.; Chin, A.; Hung, B.F.; Cheng, C.F.; Yoo, W.J. ; Li, M.F. ; Zhu, C. ; McAlister, S.P.; Kwong, D.-L.
2004A novel program-erasable high-κ AlN capacitor with memory functionChin, A. ; Lai, C.H.; Hung, B.F.; Cheng, C.F.; McAlister, S.P.; Zhu, C. ; Li, M.-F. ; Kwong, D.-L.
Aug-2004Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobilityYu, D.S.; Chiang, K.C.; Cheng, C.F.; Chin, A.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
2004Narrow-band band-pass filters on silicon substrates at 30 GHzYu, D.S.; Cheng, C.F.; Chan, K.T.; Chin, A.; McAlister, S.P.; Zhu, C. ; Li, M.F. ; Kwong, D.L.
2005Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retentionLai, C.H.; Chin, A. ; Chiang, K.C.; Yoo, W.J. ; Cheng, C.F.; McAlister, S.P.; Chi, C.C.; Wu, P.
Jun-2005The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETsYu, D.S.; Liao, C.C.; Cheng, C.F.; Chin, A. ; Li, M.F. ; McAlister, S.P.
Feb-2005Three-dimensional metal gate-high-Κ-GOI CMOSFETs on 1-poly-6-metal 0.18-μm Si devicesYu, D.S.; Chin, A. ; Liao, C.C.; Lee, C.F.; Cheng, C.F.; Li, M.F. ; Yoo, W.J. ; McAlister, S.P.
2005Very high κ and high density TiTaO MIM capacitors for analog and RF applicationsChiang, K.C.; Chin, A. ; Lai, C.H.; Chen, W.J.; Cheng, C.F.; Hung, B.F.; Liao, C.C.