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Showing results 1 to 20 of 28
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Issue Date
Title
Author(s)
2007
Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
Yang, M.
;
Wang, S.J.
;
Peng, G.W.
;
Wu, R.Q.
;
Feng, Y.P.
2010
Adsorption of an Mn atom on a ZnO sheet and nanotube: A density functional theory study
He, A.L.
;
Wang, X.Q.
;
Wu, R.Q.
;
Lu, Y.H.
;
Feng, Y.P.
2006
Cu-doped GaN: A dilute magnetic semiconductor from first-principles study
Wu, R.Q.
;
Peng, G.W.
;
Liu, L.
;
Feng, Y.P.
;
Huang, Z.G.
;
Wu, Q.Y.
19-Sep-2008
Disorder and surface effects on work function of Ni-Pt metal gates
Xu, G.
;
Wu, Q.
;
Chen, Z.
;
Huang, Z.
;
Wu, R.
;
Feng, Y.P.
2008
Effect of atomic hydrogen on boron-doped germanium: An ab initio study
Wu, R.Q.
;
Yang, M.
;
Feng, Y.P.
;
Ouyang, Y.F.
2009
Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering
Lu, Y.H.
;
Wu, R.Q.
;
Shen, L.
;
Yang, M.
;
Sha, Z.D.
;
Cai, Y.Q.
;
He, P.M.
;
Feng, Y.P.
2009
Electronic structures of Β -Si3 N4 (0001) /Si (111) interfaces: Perfect bonding and dangling bond effects
Yang, M.
;
Wu, R.Q.
;
Deng, W.S.
;
Shen, L.
;
Sha, Z.D.
;
Cai, Y.Q.
;
Feng, Y.P.
;
Wang, S.J.
2006
Ferromagnetism in Mg-doped AlN from ab initio study
Wu, R.Q.
;
Peng, G.W.
;
Liu, L.
;
Feng, Y.P.
;
Huang, Z.G.
;
Wu, Q.Y.
2009
Ferromagnetism in semiconductors doped with non-magnetic elements
Feng, Y.P.
;
Pan, H.
;
Wu, R.Q.
;
Shen, L.
;
Ding, J.
;
Yi, J.B.
;
Wu, Y.H.
1-May-2006
First principles study on the interface of CrSbGaSb heterojunction
Wu, R.Q.
;
Liu, L.
;
Peng, G.W.
;
Feng, Y.P.
2009
Glass forming abilities of binary Cu100-x Zrx (34, 35.5, and 38.2 at. %) metallic glasses: A LAMMPS study
Sha, Z.D.
;
Wu, R.Q.
;
Lu, Y.H.
;
Shen, L.
;
Yang, M.
;
Cai, Y.Q.
;
Feng, Y.P.
;
Li, Y.
2008
Half-metallic NiO in zinc-blende structure from ab initio calculations
Wu, R.Q.
;
Feng, Y.P.
;
Ouyang, Y.F.
;
Zhou, P.
;
Hu, C.H.
2009
Impact of oxide defects on band offset at GeO2 /Ge interface
Yang, M.
;
Wu, R.Q.
;
Chen, Q.
;
Deng, W.S.
;
Feng, Y.P.
;
Chai, J.W.
;
Pan, J.S.
;
Wang, S.J.
2008
Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy study
Yang, M.
;
Peng, G.W.
;
Wu, R.Q.
;
Deng, W.S.
;
Shen, L.
;
Chen, Q.
;
Feng, Y.P.
;
Chai, J.W.
;
Pan, J.S.
;
Wang, S.J.
21-Mar-2005
Magnetism in BN nanotubes induced by carbon doping
Wu, R.Q.
;
Liu, L.
;
Peng, G.W.
;
Feng, Y.P.
2011
Manipulating absorption and diffusion of H atom on graphene by mechanical strain
Yang, M.
;
Nurbawono, A.
;
Zhang, C.
;
Wu, R.
;
Feng, Y.
;
Ariando
29-Aug-2008
Mechanism of ferromagnetism in nitrogen-doped ZnO: First-principle calculations
Shen, L.
;
Wu, R.Q.
;
Pan, H.
;
Peng, G.W.
;
Yang, M.
;
Sha, Z.D.
;
Feng, Y.P.
30-Mar-2010
Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site
Yang, K.
;
Wu, R.
;
Shen, L.
;
Feng, Y.P.
;
Dai, Y.
;
Huang, B.
1-Jan-2006
Phase transition mechanism in KIO3 single crystals
Liu, L.
;
Wu, R.Q.
;
Ni, Z.H.
;
Shen, Z.X.
;
Feng, Y.P.
2007
Possible efficient p-type doping of AlN using Be: An ab initio study
Wu, R.Q.
;
Shen, L.
;
Yang, M.
;
Sha, Z.D.
;
Cai, Y.Q.
;
Feng, Y.P.
;
Huang, Z.G.
;
Wu, Q.Y.