Browsing by Author HAN GENQUAN

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Showing results 17 to 36 of 41 < previous   next >
Issue DateTitleAuthor(s)
2012High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrateHan, G. ; Su, S.; Yang, Y.; Guo, P.; Gong, X.; Wang, L.; Wang, W.; Guo, C.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.C. 
2012High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drainLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Pulido, M.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
2011High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modulesHan, G. ; Su, S.; Zhan, C.; Zhou, Q. ; Yang, Y.; Wang, L.; Guo, P.; Wei, W.; Wong, C.P.; Shen, Z.X.; Cheng, B.; Yeo, Y.-C. 
2012High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stackLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
2012In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effectsHan, G. ; Zhou, Q. ; Guo, P.; Wang, W.; Yang, Y.; Yeo, Y.-C. 
2012Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistorWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
2012(NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETsWang, L.; Su, S.; Wang, W.; Gong, X.; Yang, Y.; Guo, P.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2013Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregationTong, Y.; Han, G. ; Liu, B.; Yang, Y.; Wang, L.; Wang, W.; Yeo, Y.-C. 
2012PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical modelHan, G. ; Yang, Y.; Guo, P.; Zhan, C.; Low, K.L.; Goh, K.H.; Liu, B.; Toh, E.-H.; Yeo, Y.-C. 
2013Relaxed and strained patterned germanium-tin structures: A Raman scattering studyCheng, R. ; Wang, W.; Gong, X.; Sun, L.; Guo, P.; Hu, H.; Shen, Z.; Han, G. ; Yeo, Y.-C. 
11-Apr-2011Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrateHan, G. ; Guo, P.; Yang, Y.; Zhan, C.; Zhou, Q. ; Yeo, Y.-C. 
1-Jun-2012Simulation of tunneling field-effect transistors with extended source structuresYang, Y.; Guo, P.; Han, G. ; Lu Low, K.; Zhan, C.; Yeo, Y.-C. 
Apr-2011Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructureHan, G. ; Guo, P.; Yang, Y.; Fan, L.; Yee, Y.S.; Zhan, C.; Yeo, Y.-C. 
2010Strain engineering and junction design for tunnel field-effect transistorYeo, Y.-C. ; Han, G. ; Yang, Y.; Guo, P.
2012Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layerHan, G. ; Su, S.; Wang, L.; Wang, W.; Gong, X.; Yang, Y.; Ivana; Guo, P.; Guo, C.; Zhang, G.; Pan, J.; Zhang, Z.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
2013Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivationWang, L.; Su, S.; Wang, W.; Gong, X.; Yang, Y.; Guo, P.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2013Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOSGong, X.; Han, G. ; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Kong, E.Y.-J.; Su, S.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
2012Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETsWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Liu, B.; Kong, E.Y.-J.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
2012Tin-incorporated source/drain and channel materials for field-effect transistorsYeo, Y.-C. ; Han, G. ; Gong, X.; Wang, L.; Wang, W.; Yang, Y.; Guo, P.; Liu, B.; Su, S.; Zhang, G.; Xue, C.; Cheng, B.
2012Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)Yang, Y.; Su, S.; Guo, P.; Wang, W.; Gong, X.; Wang, L.; Low, K.L.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C.