Browsing by Author CHIN FENG-DER,ALBERT

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Issue DateTitleAuthor(s)
Jun-2005High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectricHung, B.F.; Chiang, K.C.; Huang, C.C.; Chin, A. ; McAlister, S.P.
Jul-2005High-κ Ir/TiTaO/TaN capacitors suitable for analog IC applicationsChiang, K.C.; Huang, C.C.; Chin, A. ; Chen, W.J.; McAlister, S.P.; Chiu, H.F.; Chen, J.-R.; Chi, C.C.
2004Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETsLow, T.; Li, M.F. ; Fan, W.J.; Ng, S.T.; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Chan, L.; Kwong, D.L.
2005Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function differenceYu, D.S.; Chin, A. ; Wu, C.H.; Li, M.-F. ; Zhu, C. ; Wang, S.J.; Yoo, W.J. ; Hung, B.F.; McAlister, S.P.
2005Low noise and high gain RF MOSFETs on plastic substratesKao, H.L.; Chin, A. ; Huang, C.C.; Hung, B.F.; Chiang, K.C.; Lai, Z.M.; McAlister, S.P.; Chi, C.C.
Jul-2005Low noise RF MOSFETs on flexible plastic substratesKao, H.L.; Chin, A. ; Hung, B.F.; Lee, C.F.; Lai, J.M.; McAlister, S.P.; Samudra, G.S. ; Yoo, W.J. ; Chi, C.C.
2005Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retentionChin, A. ; Laio, C.C.; Chen, C.; Chiang, K.C.; Yu, D.S.; Yoo, W.J. ; Samudra, G.S. ; Wang, T.; Hsieh, I.J.; McAlister, S.P.; Chi, C.C.
Sep-2005Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriersKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
Feb-2003MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectricsHu, H.; Zhu, C. ; Yu, X.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.; Liu, X.; Winkler, J.
2005Modeling RF MOSFETs after electrical stress using low-noise microstrip line layoutKao, H.L.; Chin, A. ; Lai, J.M.; Lee, C.F.; Chiang, K.C.; McAlister, S.P.
Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
2005New developments in Schottky source/drain high-k/metal gate CMOS transistorsLi, M.-F. ; Lee, S. ; Zhu, S. ; Li, R.; Chen, J. ; Chin, A. ; Kwong, D.L.
2005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
2005Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retentionLai, C.H.; Chin, A. ; Chiang, K.C.; Yoo, W.J. ; Cheng, C.F.; McAlister, S.P.; Chi, C.C.; Wu, P.
Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
2005Strain-induced very low noise RF MOSFETs on flexible plastic substrateKao, H.L.; Chin, A. ; Hung, B.F.; Lai, J.M.; Lee, C.F.; Li, M.-F. ; Samudra, G.S. ; Zhu, C. ; Xia, Z.L.; Liu, X.Y.; Kang, J.F.
Jun-2005The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETsYu, D.S.; Liao, C.C.; Cheng, C.F.; Chin, A. ; Li, M.F. ; McAlister, S.P.
Jan-2005The power of functional scaling: Beyond the power consumption challenge and the scaling roadmapChin, A. ; McAlister, S.P.
Feb-2005Three-dimensional metal gate-high-Κ-GOI CMOSFETs on 1-poly-6-metal 0.18-μm Si devicesYu, D.S.; Chin, A. ; Liao, C.C.; Lee, C.F.; Cheng, C.F.; Li, M.F. ; Yoo, W.J. ; McAlister, S.P.
Jan-2006Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETsWang, X.P.; Li, M.-F. ; Ren, C.; Yu, X.F.; Shen, C.; Ma, H.H. ; Chin, A. ; Zhu, C.X. ; Ning, J.; Yu, M.B.; Kwong, D.-L.