Browsing by Author LING CHUNG HO

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Showing results 83 to 100 of 100 < previous 
Issue DateTitleAuthor(s)
Aug-2008Self-heating-induced spatial spread of interface state generation by hot-electron effect: Role of the high-energy tail electronAng, D.S.; Phua, T.W.H.; Ling, C.H. 
Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
Dec-1995Simulation of logarithmic time dependence of hot carrier degradation in PMOSFETsLing, C.H. ; Samudra, G.S. ; Seah, B.P.
1995Simulation of logarithmic time dependence of hot carrier degradation in PMOSFETsLing, C.H. ; Samudra, G.S. ; Seah, B.P.
May-1991Some characteristics of the zero-temperature-coefficient capacitance of an MOS capacitor in accumulationLing, C.H. 
Jan-2000Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFETCheng, Zhi-Yuan ; Ling, C.H. 
2005STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technologyPhua, W.H.T.; Ang, D.S.; Ling, C.H. ; Chui, K.J.
1995Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide filmsChoi, W.K. ; Loo, F.L.; Ling, C.H. ; Loh, F.C. ; Tan, K.L. 
1995Structural properties of amorphous silicon carbide films by plasma-enhanced chemical vapor depositionChoi, W.K. ; Chan, Y.M.; Ling, C.H. ; Lee, Y.; Gopalakrishnan, R. ; Tan, K.L. 
Jul-1995Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping currentLing, C.H. ; Tan, S.E.; Ang, D.S. 
Jun-1995Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature annealsAng, D.S. ; Ling, C.H. ; Yeow, Y.T.
1995Study of rf-sputtered yttrium oxide films on silicon by capacitance measurementsLing, C.H. ; Bhaskaran, J.; Choi, W.K. ; Ah, L.K.
1999Teaching semiconductor device physics with two-dimensional numerical solverYeow, Y.T.; Ling, C.H. 
Mar-1997The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitorsLing, C.H. ; Ang, D.S. ; Ooi, J.A.
1999The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFET'sAng, D.S. ; Ling, C.H. 
1-Jul-1994Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiationLing, C.H. 
2-Jan-1997Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiationLing, C.H. ; Cheng, Z.Y.