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Browsing by Author LING CHUNG HO

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Showing results 68 to 87 of 100 < previous   next >
Issue DateTitleAuthor(s)
1985Quasi-Fermi level variation in the space-charge region of a grain boundaryLing, C.H. ; Kwok, C.Y.; Tay, T.M.
1-Jan-1985QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.Ling, C.H. ; Kwok, C.Y.; Tay, T.M.
10-Aug-1993Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/SiSundaram, K.; Choi, W.K. ; Ling, C.H. 
1-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
1-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
1999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
1999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
1995Recombination lifetime in silicon from laser microwave photoconductance decay measurementLing, C.H. ; Teoh, H.K.; Choi, W.K. ; Zhou, T.Q. ; Ah, L.K.
1995Recombination lifetime in silicon from laser microwave photoconductance decay measurementLing, C.H. ; Teoh, H.K.; Choi, W.K. ; Zhou, T.Q. ; Ah, L.K.
2000Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate biasAng, Chew-Hoe; Ling, Chung-Ho ; Cheng, Zhi-Yuan ; Kim, Sun-Jung ; Cho, Byung-Jin 
May-1985RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.Ling, C.H. ; Kwok, C.Y.; Prasad; K.
May-1985RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.Ling, C.H. ; Kwok, C.Y.; Prasad; K.
Mar-1987Relaxation of trapped charge at silicon grain boundary statesLing, C.H. ; Kwok, C.Y.; Woo, P.K.
Mar-1987Relaxation of trapped charge at silicon grain boundary statesLing, C.H. ; Kwok, C.Y.; Woo, P.K.
Apr-2001Reliability of thin gate oxides irradiated under X-ray lithography conditionsCho, B.J. ; Kim, S.J. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
Aug-2008Self-heating-induced spatial spread of interface state generation by hot-electron effect: Role of the high-energy tail electronAng, D.S.; Phua, T.W.H.; Ling, C.H. 
Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
Dec-1995Simulation of logarithmic time dependence of hot carrier degradation in PMOSFETsLing, C.H. ; Samudra, G.S. ; Seah, B.P.
1995Simulation of logarithmic time dependence of hot carrier degradation in PMOSFETsLing, C.H. ; Samudra, G.S. ; Seah, B.P.
Showing results 68 to 87 of 100 < previous   next >