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LING CHUNG HO
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Showing results 68 to 87 of 100
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Issue Date
Title
Author(s)
1985
Quasi-Fermi level variation in the space-charge region of a grain boundary
Ling, C.H.
;
Kwok, C.Y.
;
Tay, T.M.
1-Jan-1985
QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.
Ling, C.H.
;
Kwok, C.Y.
;
Tay, T.M.
10-Aug-1993
Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si
Sundaram, K.
;
Choi, W.K.
;
Ling, C.H.
1-Nov-2000
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides
Ang, C.-H.
;
Ling, C.-H.
;
Cho, B.-J.
;
Kim, S.-J.
;
Cheng, Z.-Y.
1-Nov-2000
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides
Ang, C.-H.
;
Ling, C.-H.
;
Cho, B.-J.
;
Kim, S.-J.
;
Cheng, Z.-Y.
1999
Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions
Cho, Byung Jin
;
Kim, Sun Jung
;
Ling, C.H.
;
Joo, Moon Sig
;
Yeo, In Seok
1999
Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions
Cho, Byung Jin
;
Kim, Sun Jung
;
Ling, C.H.
;
Joo, Moon Sig
;
Yeo, In Seok
1995
Recombination lifetime in silicon from laser microwave photoconductance decay measurement
Ling, C.H.
;
Teoh, H.K.
;
Choi, W.K.
;
Zhou, T.Q.
;
Ah, L.K.
1995
Recombination lifetime in silicon from laser microwave photoconductance decay measurement
Ling, C.H.
;
Teoh, H.K.
;
Choi, W.K.
;
Zhou, T.Q.
;
Ah, L.K.
2000
Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias
Ang, Chew-Hoe
;
Ling, Chung-Ho
;
Cheng, Zhi-Yuan
;
Kim, Sun-Jung
;
Cho, Byung-Jin
May-1985
RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.
Ling, C.H.
;
Kwok, C.Y.
;
Prasad
;
K.
May-1985
RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.
Ling, C.H.
;
Kwok, C.Y.
;
Prasad
;
K.
Mar-1987
Relaxation of trapped charge at silicon grain boundary states
Ling, C.H.
;
Kwok, C.Y.
;
Woo, P.K.
Mar-1987
Relaxation of trapped charge at silicon grain boundary states
Ling, C.H.
;
Kwok, C.Y.
;
Woo, P.K.
Apr-2001
Reliability of thin gate oxides irradiated under X-ray lithography conditions
Cho, B.J.
;
Kim, S.J.
;
Ang, C.H.
;
Ling, C.H.
;
Joo, M.S.
;
Yeo, I.S.
Aug-2008
Self-heating-induced spatial spread of interface state generation by hot-electron effect: Role of the high-energy tail electron
Ang, D.S.
;
Phua, T.W.H.
;
Ling, C.H.
Oct-1986
SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
Ling, C.H.
;
Kwok, C.Y.
;
Prasad, K.
Oct-1986
SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
Ling, C.H.
;
Kwok, C.Y.
;
Prasad, K.
Dec-1995
Simulation of logarithmic time dependence of hot carrier degradation in PMOSFETs
Ling, C.H.
;
Samudra, G.S.
;
Seah, B.P.
1995
Simulation of logarithmic time dependence of hot carrier degradation in PMOSFETs
Ling, C.H.
;
Samudra, G.S.
;
Seah, B.P.