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LING CHUNG HO
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Issue Date
Title
Author(s)
1-Jan-1993
Logarithmic time dependence of pMOSFET degradation observed from gate capacitance
Ling, C.H.
;
Yeow, Y.T.
;
Ah, L.K.
;
Yung, W.H.
;
Choi, W.K.
1-Jan-1993
Logarithmic time dependence of pMOSFET degradation observed from gate capacitance
Ling, C.H.
;
Yeow, Y.T.
;
Ah, L.K.
;
Yung, W.H.
;
Choi, W.K.
May-1995
Measurement and simulation of hot carrier degradation in PMOSFET by gate capacitance
Ling, C.H.
;
Seah, B.P.
;
Samudra, Ganesh S.
;
Gan, Chock H.
10-Aug-1993
Measurement of the current transient in Ta2O5 films
Sundaram, K.
;
Choi, W.K.
;
Ling, C.H.
2000
Modelling of the "Gated-diode" configuration in bulk MOSFET's
Yip, A.
;
Yeow, Y.T.
;
Samudra, G.S.
;
Ling, C.H.
2000
Modelling of the "Gated-diode" configuration in bulk MOSFET's
Yip, A.
;
Yeow, Y.T.
;
Samudra, G.S.
;
Ling, C.H.
1989
New multiple-function logic family
Tan, Y.K.
;
Lim, Y.C.
;
Kwok, C.Y.
;
Ling, C.H.
1989
New multiple-function logic family
Tan, Y.K.
;
Lim, Y.C.
;
Kwok, C.Y.
;
Ling, C.H.
Jun-2004
Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
Ang, D.S.
;
Liao, H.
;
Ling, C.H.
1987
Observation of a high-resistance to a low-resistance transition in a silicon bicrystal
Ling, C.H.
1987
Observation of a high-resistance to a low-resistance transition in a silicon bicrystal
Ling, C.H.
Jul-1991
Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
Yeow, Y.T.
;
Ling, C.H.
;
Ah, L.K.
Jul-1991
Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
Yeow, Y.T.
;
Ling, C.H.
;
Ah, L.K.
Nov-1989
Observation of zero temperature coefficient of capacitance in the MOS capacitor
Ling, C.H.
Nov-1989
Observation of zero temperature coefficient of capacitance in the MOS capacitor
Ling, C.H.
2001
On the dominant interface trap generation process during hot-carrier stressing
Ang, D.S.
;
Ling, C.H.
Sep-1999
On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress
Ang, D.S.
;
Ling, C.H.
1985
Quasi-Fermi level variation in the space-charge region of a grain boundary
Ling, C.H.
;
Kwok, C.Y.
;
Tay, T.M.
1-Jan-1985
QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.
Ling, C.H.
;
Kwok, C.Y.
;
Tay, T.M.
10-Aug-1993
Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si
Sundaram, K.
;
Choi, W.K.
;
Ling, C.H.