Browsing by Author LING CHUNG HO

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Issue DateTitleAuthor(s)
1-Jan-1993Logarithmic time dependence of pMOSFET degradation observed from gate capacitanceLing, C.H. ; Yeow, Y.T.; Ah, L.K.; Yung, W.H.; Choi, W.K. 
1-Jan-1993Logarithmic time dependence of pMOSFET degradation observed from gate capacitanceLing, C.H. ; Yeow, Y.T.; Ah, L.K.; Yung, W.H.; Choi, W.K. 
May-1995Measurement and simulation of hot carrier degradation in PMOSFET by gate capacitanceLing, C.H. ; Seah, B.P.; Samudra, Ganesh S. ; Gan, Chock H.
10-Aug-1993Measurement of the current transient in Ta2O5 filmsSundaram, K.; Choi, W.K. ; Ling, C.H. 
2000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
2000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
1989New multiple-function logic familyTan, Y.K.; Lim, Y.C. ; Kwok, C.Y.; Ling, C.H. 
1989New multiple-function logic familyTan, Y.K.; Lim, Y.C. ; Kwok, C.Y.; Ling, C.H. 
Jun-2004Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETsAng, D.S.; Liao, H.; Ling, C.H. 
1987Observation of a high-resistance to a low-resistance transition in a silicon bicrystalLing, C.H. 
1987Observation of a high-resistance to a low-resistance transition in a silicon bicrystalLing, C.H. 
Jul-1991Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurementYeow, Y.T.; Ling, C.H. ; Ah, L.K.
Jul-1991Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurementYeow, Y.T.; Ling, C.H. ; Ah, L.K.
Nov-1989Observation of zero temperature coefficient of capacitance in the MOS capacitorLing, C.H. 
Nov-1989Observation of zero temperature coefficient of capacitance in the MOS capacitorLing, C.H. 
2001On the dominant interface trap generation process during hot-carrier stressingAng, D.S. ; Ling, C.H. 
Sep-1999On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stressAng, D.S. ; Ling, C.H. 
1985Quasi-Fermi level variation in the space-charge region of a grain boundaryLing, C.H. ; Kwok, C.Y.; Tay, T.M.
1-Jan-1985QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.Ling, C.H. ; Kwok, C.Y.; Tay, T.M.
10-Aug-1993Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/SiSundaram, K.; Choi, W.K. ; Ling, C.H.