Browsing by Author LING CHUNG HO

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 29 to 48 of 100 < previous   next >
Issue DateTitleAuthor(s)
Sep-1985EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
Aug-1995Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET'sLing, C.H. ; Ang, D.S. ; Tan, S.E.
1-Dec-1996Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET'sAng, D.S. ; Ling, C.H. 
1996Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitorsLing, C.H. ; Ooi, J.A.; Ang, D.S. 
Jul-1985Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computationLing, C.H. ; Kwok, C.Y.
1-Oct-1993Electron trapping and interface state generation in PMOSFET's: Results from gate capacitanceLing, C.H. 
Dec-2004Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFETAng, D.S.; Liao, H.; Phua, T.W.H.; Ling, C.H. 
Dec-2005Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFETAng, D.S.; Wang, S.; Ling, C.H. 
15-Feb-1996Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitanceLing, C.H. ; Ang, D.S. ; Dutoit, M.
1997Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping currentLing, C.H. ; Goh, Y.H.; Ooi, J.A.
Sep-1986Frequency dependence of MOS capacitance in strong inversion and at elevated temperaturesLing, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
Sep-1986Frequency dependence of MOS capacitance in strong inversion and at elevated temperaturesLing, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
Feb-2001Gate-channel capacitance characteristics in the fully-depleted SOI MOSFETCheng, Z.-Y. ; Ling, C.H. 
Feb-2001Gate-channel capacitance characteristics in the fully-depleted SOI MOSFETCheng, Z.-Y. ; Ling, C.H. 
Nov-2001Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear regionAng, D.S. ; Lun, Z. ; Ling, C.H. 
Dec-2003Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and ModelingAng, D.S.; Lun, Z. ; Ling, C.H. 
Jul-2003High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFETAng, D.S.; Phua, T.W.H.; Liao, H.; Ling, C.H. 
1997Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurementsGoh, Y.H.; Ling, C.H. 
1997Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurementsGoh, Y.H.; Ling, C.H. 
Jun-2008Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layerZhang, G.; Yoo, W.J.; Ling, C.-H.