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LING CHUNG HO
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Issue Date
Title
Author(s)
1992
Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers
Ling, C.H.
;
Tay, T.M.
Nov-1992
Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements
Ling, C.H.
;
Yeow, Y.T.
;
Ah, L.K.
2000
Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation
Ling, C.H.
;
Ang, C.H.
;
Ang, D.S.
May-1992
Characterization of rf-sputtered yttrium oxide films
Ling, C.
;
Bhaskaran, J.
;
Choi, W.
1998
Charge trapping in interpoly ONO film
Lira, K.S.
;
Ling, C.H.
1997
Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's
Ling, C.H.
Oct-2000
Comparative study of radiation- and stress-induced leakage currents in thin gate oxides
Ang, C.H.
;
Ling, C.H.
;
Cheng, Z.Y.
;
Kim, S.J.
;
Cho, B.J.
1-Jul-2000
Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation
Cho, B.J.
;
Kim, S.J.
;
Ling, C.H.
;
Joo, M.-S.
;
Yeo, I.-S.
1997
Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors
Ooi, J.A.
;
Ling, C.H.
Jul-1985
COMPUTATION OF ELECTRON AND HOLE QUASI-FERMI LEVELS IN POLYCRYSTALLINE SILICON FILMS UNDER UNIFORM ILLUMINATION AND ZERO BIAS.
Ling, Chung Ho
1997
Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's
Goh, Y.H.
;
Ah, L.K.
;
Ling, C.H.
May-1996
Determination of LDD MOSFET drain resistance from device simulation
Samudra, G.S.
;
Seah, B.P.
;
Ling, C.H.
2000
Does short wavelength lithography process degrade the integrity of thin gate oxide?
Kim, S.J.
;
Cho, B.J.
;
Chong, P.F.
;
Chor, E.F.
;
Ang, C.H.
;
Ling, C.H.
;
Joo, M.S.
;
Yeo, I.S.
Sep-1985
EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.
Ling, C.H.
;
Kwok, C.Y.
;
Prasad, K.
Aug-1995
Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET's
Ling, C.H.
;
Ang, D.S.
;
Tan, S.E.
1-Dec-1996
Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
Ang, D.S.
;
Ling, C.H.
1996
Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors
Ling, C.H.
;
Ooi, J.A.
;
Ang, D.S.
Jul-1985
Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation
Ling, C.H.
;
Kwok, C.Y.
1-Oct-1993
Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance
Ling, C.H.
Dec-2004
Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET
Ang, D.S.
;
Liao, H.
;
Phua, T.W.H.
;
Ling, C.H.