Browsing by Author LING CHUNG HO

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Issue DateTitleAuthor(s)
1992Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafersLing, C.H. ; Tay, T.M.
Nov-1992Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurementsLing, C.H. ; Yeow, Y.T.; Ah, L.K.
2000Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiationLing, C.H. ; Ang, C.H.; Ang, D.S. 
May-1992Characterization of rf-sputtered yttrium oxide filmsLing, C. ; Bhaskaran, J.; Choi, W. 
1998Charge trapping in interpoly ONO filmLira, K.S.; Ling, C.H. 
1997Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET'sLing, C.H. 
Oct-2000Comparative study of radiation- and stress-induced leakage currents in thin gate oxidesAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
1-Jul-2000Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradationCho, B.J. ; Kim, S.J. ; Ling, C.H. ; Joo, M.-S.; Yeo, I.-S.
1997Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitorsOoi, J.A.; Ling, C.H. 
Jul-1985COMPUTATION OF ELECTRON AND HOLE QUASI-FERMI LEVELS IN POLYCRYSTALLINE SILICON FILMS UNDER UNIFORM ILLUMINATION AND ZERO BIAS.Ling, Chung Ho 
1997Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET'sGoh, Y.H.; Ah, L.K.; Ling, C.H. 
May-1996Determination of LDD MOSFET drain resistance from device simulationSamudra, G.S. ; Seah, B.P.; Ling, C.H. 
2000Does short wavelength lithography process degrade the integrity of thin gate oxide?Kim, S.J. ; Cho, B.J. ; Chong, P.F.; Chor, E.F. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
Sep-1985EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
Aug-1995Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET'sLing, C.H. ; Ang, D.S. ; Tan, S.E.
1-Dec-1996Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET'sAng, D.S. ; Ling, C.H. 
1996Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitorsLing, C.H. ; Ooi, J.A.; Ang, D.S. 
Jul-1985Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computationLing, C.H. ; Kwok, C.Y.
1-Oct-1993Electron trapping and interface state generation in PMOSFET's: Results from gate capacitanceLing, C.H. 
Dec-2004Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFETAng, D.S.; Liao, H.; Phua, T.W.H.; Ling, C.H.