1. ScholarBank@NUS
  2. Research Outputs

Browsing by Author RAPETA V V V JAGANNADHA RAO

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 3 to 12 of 12 < previous 
Issue DateTitleAuthor(s)
1999Effect of LT-layer thickness on the performance of LT-GaAs and LT-Al0.3Ga0.7As MISFETsRao, Rapeta V.V.V.J. ; Chongt, T.C.; Tan, L.S. ; Lau, W.S. 
1999Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parametersRao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. 
1999Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTsRao, Rapeta V.V.V.J. ; Joe, J. ; Chia, Y.W.Michael ; Ang, K.S.; Wang, H.; Ng, G.I.
15-Oct-1998Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layersRao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Geng, C. ; Lim, N. 
1999Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs - characterization and model developmentRao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, J.J.
8-Jul-1999Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTsRao, R.V.V.V.J. ; Joe, J. ; Chia, Y.W.M. ; Ang, K.S.; Ng, G.I.
1999Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET DevicesRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, J.J.
5-Oct-2000Quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devicesRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S.; Liou, J.J.
Jun-2000Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al0.3Ga0.7As gate InsRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. 
Sep-1999Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodesRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Lim, N. 
Showing results 3 to 12 of 12 < previous