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RAPETA V V V JAGANNADHA RAO
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Showing results 3 to 12 of 12
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Issue Date
Title
Author(s)
1999
Effect of LT-layer thickness on the performance of LT-GaAs and LT-Al0.3Ga0.7As MISFETs
Rao, Rapeta V.V.V.J.
;
Chongt, T.C.
;
Tan, L.S.
;
Lau, W.S.
1999
Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parameters
Rao, Rapeta V.V.V.J.
;
Chong, T.C.
;
Tan, L.S.
;
Lau, W.S.
1999
Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTs
Rao, Rapeta V.V.V.J.
;
Joe, J.
;
Chia, Y.W.Michael
;
Ang, K.S.
;
Wang, H.
;
Ng, G.I.
15-Oct-1998
Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layers
Rao, R.V.V.V.J.
;
Chong, T.C.
;
Lau, W.S.
;
Tan, L.S.
;
Geng, C.
;
Lim, N.
1999
Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs - characterization and model development
Rao, Rapeta V.V.V.J.
;
Chong, T.C.
;
Tan, L.S.
;
Lau, W.S.
;
Liou, J.J.
8-Jul-1999
Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs
Rao, R.V.V.V.J.
;
Joe, J.
;
Chia, Y.W.M.
;
Ang, K.S.
;
Ng, G.I.
1999
Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices
Rao, R.V.V.V.J.
;
Chong, T.C.
;
Tan, L.S.
;
Lau, W.S.
;
Liou, J.J.
5-Oct-2000
Quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices
Rao, R.V.V.V.J.
;
Chong, T.C.
;
Tan, L.S.
;
Lau, W.S.
;
Liou, J.J.
Jun-2000
Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al0.3Ga0.7As gate Ins
Rao, R.V.V.V.J.
;
Chong, T.C.
;
Tan, L.S.
;
Lau, W.S.
Sep-1999
Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes
Rao, R.V.V.V.J.
;
Chong, T.C.
;
Tan, L.S.
;
Lau, W.S.
;
Lim, N.