Browsing by Author Feng Zhe Chuan

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Issue DateTitleAuthor(s)
Feb-1995Growth and investigation of quaternary III-III-III-V InGaAlAs alloy layers on InP by molecular beam epitaxyFeng, Z.C. ; Chua, S.J. ; Raman, A. ; Williams, K.J.
1993Impurity-induced phonon disordering in Cd1-xZnxTe ternary alloysTalwar, D.N.; Feng, Z.C. ; Becla, P.
2000Infrared reflectance study of chemical vapor deposition grown 3C-silicon carbide on silicon substrateChang, W.Y.; Feng, Z.C. ; Chua, S.J. ; Lin, J. 
Jun-2002Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiCChang, W.; Feng, Z.C. ; Lin, J. ; Liu, R. ; Wee, A.T.S. ; Tone, K.; Zhao, J.H.
1995Low threshold ZnSe1-xTex optical limitersJi, W. ; Tan, H.S. ; Feng, Z.C. ; Becla, P.
1999Luminescence, morphology and X-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor depositionLi, P.; Chua, S.J. ; Feng, Z.C. ; Wang, W.; Hao, M.S.; Sugahara, T.; Sakai, S.
1998Multi-technique analysis of MOCVD-grown lead lanthanum titanate (Pb1-xLax)TiO3 thin films on quartz substratesChen, H.Y.; Lin, J. ; Tan, K.L. ; Feng, Z.C. ; Kwak, B.S.; Erbil, A.
2-Apr-1994Nonlinear refraction and optical limiting in bulk ZnTe crystalJi, W. ; Kukaswadia, A.K.; Feng, Z.C. ; Tang, S.H. ; Becla, P.
1994Optical and x-ray diffraction characterization of MBE-grown InGaAs, InAIAs and InGaAIAs on InPFeng, Z.C. ; Chua, S.J. ; Raman, A.; Lim, N.N. 
15-Sep-1995Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor depositionFeng, Z.C. ; Tin, C.C.; Hu, R.; Williams, J.
1999Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 KLi, W.S. ; Shen, Z.X. ; Feng, Z.C. ; Chua, S.J. 
1994Raman scattering and x-ray diffraction investigations of highly textured (Pb1-xLax)TiO3 thin filmsFeng, Z.C. ; Kwak, B.S.; Erbil, A.; Boatner, L.A.
1994Raman spectra of MOCVD-grown ferroelectric PbTiO3 thin filmsFeng, Z.C. ; Kwak, B.S.; Erbil, A.; Boatner, L.A.
2-Apr-1994Raman, infrared, photoluminescence and theoretical studies of the II-VI-VI ternary CdSeTeFeng, Z.C. ; Becla, P.; Kim, L.S.; Perkowitz, S.; Feng, Y.P. ; Poon, H.C. ; Williams, K.P.; Pitt, G.D.
1995Relativistic band structure of ternary II-VI semiconductor alloys containing Cd, Zn, Se and TePoon, H.C. ; Feng, Z.C. ; Feng, Y.P. ; Li, M.F. 
29-Mar-1999Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structureHuang, Y.S.; Sun, W.D.; Malikova, L.; Pollak, F.H.; Ferguson, I.; Hou, H.; Feng, Z.C. ; Ryan, T.; Fantner, E.B.
1-Apr-1994Self-defocusing of nanosecond laser pulses in ZnTeJi, W. ; Kukaswadia, A.K.; Feng, Z.C. ; Tang, S.H. 
1-Dec-1998Spatial characterization of doped SiC wafers by Raman spectroscopyBurton, J.C.; Sun, L.; Pophristic, M.; Lukacs, S.J.; Long, F.H.; Feng, Z.C. ; Ferguson, I.T.
1999Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor depositionChen, J.L.; Feng, Z.C. ; Zhang, X.; Chua, S.J. ; Hou, Y.T. ; Lin, J. 
1994Surface and optical analyses of porous silicon membranesFeng, Z.C. ; Wee, A.T.S. ; Tan, K.L.