Browsing by Author Feng Zhe Chuan

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Issue DateTitleAuthor(s)
1996A multi-technique study of the surface preparation of InSb substrate and subsequently grown CdTe films by molecular beam epitaxyFeng, Z.C. ; Gong, H. ; Choyke, W.J.; Doyle, N.J.; Farrow, R.F.C.
Jul-1993Anomalous temperature behavior of Raman spectra from visible light emitting porous siliconFeng, Z.C. ; Payne, J.R.; Covington, B.C.
1994Combined optical, structural and theoretical assessment of MOCVD grown multiple GaAs quantum wellsFeng, Z.C. ; Cen, J.; Bajaj, K.K.; Messham, R.L.; Clemen, L.L.; Yoganathan, M.; Choyke, W.J.
1994Combined structural and optical assessment of CVD grown 3C-SiC/SiFeng, Z.C. ; Tin, C.C.; Yue, K.T.; Hu, R.; Williams, J.; Liew, S.C. ; Foo, Y.G.; Choo, S.K.L.; Ng, W.E.; Tang, S.H. 
1999Compositional and morphological analysis of InxGa1-xN/GaN epilayersLi, K.; Wee, A.T.S. ; Lin, J. ; Feng, Z.C. ; Lau, E.W.P.
5-Apr-1999Enhanced optical emission from GaN films grown on a silicon substrateZhang, X. ; Chua, S.-J. ; Li, P.; Chong, K.-B. ; Feng, Z.-C. 
2001Epitaxial film growth and characterizationFerguson, I.T.; Thompson, A.G.; Barnett, S.A.; Long, F.H.; Feng, Z.C. 
2000Excitation power dependence of photoluminescence spectra of CdTe on InSb grown by molecular-beam epitaxyChang, W.Y.; Feng, Z.C. ; Chua, S.J. ; Lin, J. 
Feb-1995Growth and investigation of quaternary III-III-III-V InGaAlAs alloy layers on InP by molecular beam epitaxyFeng, Z.C. ; Chua, S.J. ; Raman, A. ; Williams, K.J.
1993Impurity-induced phonon disordering in Cd1-xZnxTe ternary alloysTalwar, D.N.; Feng, Z.C. ; Becla, P.
2000Infrared reflectance study of chemical vapor deposition grown 3C-silicon carbide on silicon substrateChang, W.Y.; Feng, Z.C. ; Chua, S.J. ; Lin, J. 
Jun-2002Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiCChang, W.; Feng, Z.C. ; Lin, J. ; Liu, R. ; Wee, A.T.S. ; Tone, K.; Zhao, J.H.
1995Low threshold ZnSe1-xTex optical limitersJi, W. ; Tan, H.S. ; Feng, Z.C. ; Becla, P.
1999Luminescence, morphology and X-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor depositionLi, P.; Chua, S.J. ; Feng, Z.C. ; Wang, W.; Hao, M.S.; Sugahara, T.; Sakai, S.
1998Multi-technique analysis of MOCVD-grown lead lanthanum titanate (Pb1-xLax)TiO3 thin films on quartz substratesChen, H.Y.; Lin, J. ; Tan, K.L. ; Feng, Z.C. ; Kwak, B.S.; Erbil, A.
2-Apr-1994Nonlinear refraction and optical limiting in bulk ZnTe crystalJi, W. ; Kukaswadia, A.K.; Feng, Z.C. ; Tang, S.H. ; Becla, P.
1994Optical and x-ray diffraction characterization of MBE-grown InGaAs, InAIAs and InGaAIAs on InPFeng, Z.C. ; Chua, S.J. ; Raman, A.; Lim, N.N. 
15-Sep-1995Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor depositionFeng, Z.C. ; Tin, C.C.; Hu, R.; Williams, J.
1999Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 KLi, W.S. ; Shen, Z.X. ; Feng, Z.C. ; Chua, S.J. 
1994Raman scattering and x-ray diffraction investigations of highly textured (Pb1-xLax)TiO3 thin filmsFeng, Z.C. ; Kwak, B.S.; Erbil, A.; Boatner, L.A.