Browsing by Author LIANG GENGCHIAU

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 45 to 64 of 77 < previous   next >
Issue DateTitleAuthor(s)
Mar-2007Performance analysis of a Ge/Si core/shell nanowire field-effect transistorLiang, G. ; Xiang, J.; Kharche, N.; Klimeck, G.; Lieber, C.M.; Lundstrom, M.
2011Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistorsLam, K.-T.; Peck, Y.-Z.; Lim, Z.-H.; Liang, G. 
2012Performance comparison of III-V MOSFETs with source filter for electron energyLam, K.-T.; Yeo, Y.-C. ; Liang, G. 
21-Oct-2012Performance evaluation of electro-optic effect based graphene transistorsGupta, G.; Abdul Jalil, M.B. ; Yu, B.; Liang, G. 
2012Quantum transport simulations of graphene nanoribbon devices using dirac equation calibrated with tight-binding π-bond modelChin, S.-K.; Lam, K.-T.; Seah, D.; Liang, G. 
2012Quantum transport simulations of graphene nanoribbon devices using dirac equation calibrated with tight-binding π-bond modelChin, S.-K.; Lam, K.-T.; Seah, D.; Liang, G. 
2009Shape effects in graphene nanoribbon resonant tunneling diodes: A computational studyTeong, H.; Lam, K.-T.; Khalid, S.B.; Liang, G. 
Apr-2010Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructureKoong, C.S.; Samudra, G. ; Liang, G. 
2011Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistorsDa, H. ; Lam, K.-T.; Samudra, G.S. ; Liang, G. ; Chin, S.-K.
1-Oct-2012Spin filtering and spin separating effects in U-shaped topological insulator devicesZeng, M. ; Liang, G. 
20-Feb-2008Spin tunneling in multilayer spintronic devicesTan, S.G. ; Jalil, M.B.A. ; Kumar, S.B. ; Liang, G.-C. 
7-Jan-2013Spin-dependent thermoelectric effects in graphene-based spin valvesZeng, M. ; Huang, W.; Liang, G. 
15-Sep-2019Spin-wave mediated interactions for majority computation using Skyrmions and spin-torque nano-oscillatorsMiriyala, VPK ; Zhu, Z ; Liang, G ; Fong, X 
10-Jan-2011Stability and electronic structure of two dimensional Cx(BN) y compoundLam, K.-T.; Lu, Y. ; Feng, Y.P. ; Liang, G. 
2007Structure effects in the gate-all-around silicon nanowire MOSFETsLiang, G. 
Mar-2008Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speedHu, Y.; Xiang, J.; Liang, G. ; Yan, H.; Lieber, C.M.
Nov-2008Temperature dependence of carrier transport of a silicon nanowire schottky-barrier field-effect transistorYang, W.F.; Lee, S.J. ; Liang, G.C. ; Eswar, R.; Sun, Z.Q.; Kwong, D.L. 
31-Aug-2010The effect of magnetic field and disorders on the electronic transport in graphene nanoribbonsBala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.; Liang, G. 
Apr-2012The effects of interlayer mismatch on electronic properties of bilayer armchair graphene nanoribbonsQian, Y.; Lam, K.-T.; Lee, C. ; Liang, G. 
7-May-2018Theoretical proposal for determining angular momentum compensation in ferrimagnetsZhu, Zhifeng ; Fong, Xuanyao ; Liang, Gengchiau