Browsing by Author LIANG GENGCHIAU

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 36 to 55 of 77 < previous   next >
Issue DateTitleAuthor(s)
22-Aug-2011High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effectsLiang, G. ; Bala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.
2008Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistorsPeng, J.W.; Lee, S.J. ; Liang, G.C.A. ; Singh, N.; Zhu, S.Y.; Lo, G.Q.; Kwong, D.L.
Nov-2012Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistorsDa, H. ; Lam, K.-T.; Samudra, G.S. ; Liang, G. ; Chin, S.-K.
2010Influence of edge roughness on graphene nanoribbon resonant tunnelling diodesLiang, G. ; Khalid, S.B.; Lam, K.-T.
1-Feb-2019Influence of Size and Shape on the Performance of VCMA-Based MTJsMiriyala, Venkata Pavan Kumar ; Fong, Xuanyao ; Liang, Gengchiau 
2013Is sub-10nm thick 3D-topological insulator good for the local electrical interconnects?Gupta, G.; Jalil, M.B.A. ; Liang, G. 
1-Aug-2010Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulationKumar, S.B. ; Jalil, M.B.A. ; Tan, S.G.; Liang, G. 
1998Multiband quantum transmitting boundary method for non-orthogonal basisLiang G.-C. ; Lin Y.A.; Ting D.Z.-Y.; Chang Y.-C.
2013Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structureGoh, K.H.; Guo, Y.; Gong, X.; Liang, G.-C. ; Yeo, Y.-C. 
Mar-2007Performance analysis of a Ge/Si core/shell nanowire field-effect transistorLiang, G. ; Xiang, J.; Kharche, N.; Klimeck, G.; Lieber, C.M.; Lundstrom, M.
2011Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistorsLam, K.-T.; Peck, Y.-Z.; Lim, Z.-H.; Liang, G. 
2012Performance comparison of III-V MOSFETs with source filter for electron energyLam, K.-T.; Yeo, Y.-C. ; Liang, G. 
21-Oct-2012Performance evaluation of electro-optic effect based graphene transistorsGupta, G.; Abdul Jalil, M.B. ; Yu, B.; Liang, G. 
2012Quantum transport simulations of graphene nanoribbon devices using dirac equation calibrated with tight-binding π-bond modelChin, S.-K.; Lam, K.-T.; Seah, D.; Liang, G. 
2012Quantum transport simulations of graphene nanoribbon devices using dirac equation calibrated with tight-binding π-bond modelChin, S.-K.; Lam, K.-T.; Seah, D.; Liang, G. 
2009Shape effects in graphene nanoribbon resonant tunneling diodes: A computational studyTeong, H.; Lam, K.-T.; Khalid, S.B.; Liang, G. 
Apr-2010Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructureKoong, C.S.; Samudra, G. ; Liang, G. 
2011Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistorsDa, H. ; Lam, K.-T.; Samudra, G.S. ; Liang, G. ; Chin, S.-K.
1-Oct-2012Spin filtering and spin separating effects in U-shaped topological insulator devicesZeng, M. ; Liang, G. 
20-Feb-2008Spin tunneling in multilayer spintronic devicesTan, S.G. ; Jalil, M.B.A. ; Kumar, S.B. ; Liang, G.-C.