Browsing by Author LIANG GENGCHIAU

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Issue DateTitleAuthor(s)
2010Geometry effects on thermoelectric properties of silicon nanowires based on electronic band structuresLiang, G. ; Huang, W.; Koong, C.S.; Wang, J.-S. ; Lan, J.
2014Germanium-Tin on Si avalanche photodiode: Device design and technology demonstrationDong, Y.; Wang, W. ; Xu, X.; Gong, X. ; Lei, D.; Zhou, Q. ; Xu, Z.; Loke, W.K.; Yoon, S.-F.; Liang, G. ; Yeo, Y.-C. 
May-2012Graphene nanoribbon tunneling field-effect transistors with a semiconducting and a semimetallic heterojunction channelDa, H. ; Lam, K.-T.; Samudra, G. ; Chin, S.-K.; Liang, G. 
9-Mar-2011Graphene-based spin caloritronicsZeng, M. ; Feng, Y. ; Liang, G. 
22-Aug-2011High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effectsLiang, G. ; Bala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.
2008Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistorsPeng, J.W.; Lee, S.J. ; Liang, G.C.A. ; Singh, N.; Zhu, S.Y.; Lo, G.Q.; Kwong, D.L.
Nov-2012Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistorsDa, H. ; Lam, K.-T.; Samudra, G.S. ; Liang, G. ; Chin, S.-K.
2010Influence of edge roughness on graphene nanoribbon resonant tunnelling diodesLiang, G. ; Khalid, S.B.; Lam, K.-T.
1-Feb-2019Influence of Size and Shape on the Performance of VCMA-Based MTJsMiriyala, Venkata Pavan Kumar ; Fong, Xuanyao ; Liang, Gengchiau 
2013Is sub-10nm thick 3D-topological insulator good for the local electrical interconnects?Gupta, G.; Jalil, M.B.A. ; Liang, G. 
2016Klein tunneling in Weyl semimetals under the influence of magnetic fieldYesilyurt C.; Tan S.G. ; Liang G. ; Jalil M.B.A. 
1-Aug-2010Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulationKumar, S.B. ; Jalil, M.B.A. ; Tan, S.G.; Liang, G. 
1998Multiband quantum transmitting boundary method for non-orthogonal basisLiang G.-C. ; Lin Y.A.; Ting D.Z.-Y.; Chang Y.-C.
2013Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structureGoh, K.H.; Guo, Y.; Gong, X.; Liang, G.-C. ; Yeo, Y.-C. 
2016Perfect valley filter in strained graphene with single barrier regionYesilyurt C.; Ghee Tan S. ; Liang G. ; Jalil M.B.A. 
Mar-2007Performance analysis of a Ge/Si core/shell nanowire field-effect transistorLiang, G. ; Xiang, J.; Kharche, N.; Klimeck, G.; Lieber, C.M.; Lundstrom, M.
2011Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistorsLam, K.-T.; Peck, Y.-Z.; Lim, Z.-H.; Liang, G. 
2012Performance comparison of III-V MOSFETs with source filter for electron energyLam, K.-T.; Yeo, Y.-C. ; Liang, G. 
21-Oct-2012Performance evaluation of electro-optic effect based graphene transistorsGupta, G.; Abdul Jalil, M.B. ; Yu, B.; Liang, G. 
2012Quantum transport simulations of graphene nanoribbon devices using dirac equation calibrated with tight-binding π-bond modelChin, S.-K.; Lam, K.-T.; Seah, D.; Liang, G.