Browsing by Author LIANG GENGCHIAU

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Issue DateTitleAuthor(s)
2007Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulationLiang, G. ; Neophytou, N.; Lundstrom, M.S.; Nikonov, D.E.
2014Ballistic transport performance of silicane and germanane transistorsLow, K.L.; Huang, W.; Yeo, Y.-C. ; Liang, G. 
2009Bilayer graphene nanoribbon nanoelectromechanical system device: A computational studyLam, K.-T.; Lee, C. ; Liang, G. 
2008Computational study of double-gate graphene nano-ribbon transistorsLiang, G. ; Neophytou, N.; Lundstrom, M.S.; Nikonov, D.E.
2009Computational study of graphene nanoribbon resonant tunneling diodesLiang, G. ; Teong, H.; Lam, K.-T.
2009Computational study on the performance comparison of monolayer and bilayer zigzag graphene nanoribbon FETsLam, K.-T.; Liang, G. 
1-Apr-2011Conductance modulation in graphene nanoribbon under transverse asymmetric electric potentialBala Kumar, S. ; Fujita, T. ; Liang, G. 
Jul-2008Contact effects in graphene nanoribbon transistorsLiang, G. ; Neophytou, N.; Lundstrom, M.S.; Nikonov, D.E.
21-Nov-2018Damping-like spin-orbit-torque-induced magnetization dynamics in ferrimagnets based on Landau-Lifshitz-Bloch equationZhu, Zhifeng ; Fong, Xuanyao ; Liang, Gengchiau 
15-Jul-2011Design evaluation of graphene nanoribbon nanoelectromechanical devicesLam, K.-T.; Stephen Leo, M.; Lee, C. ; Liang, G. 
2009Device performance of graphene nanoribbon field effect transistors with edge roughness effects: A computational studyLeong, Z.-Y.; Lam, K.-T.; Liang, G. 
Nov-2010Device physics and characteristics of graphene nanoribbon tunneling FETsChin, S.-K.; Seah, D.; Lam, K.-T.; Samudra, G.S. ; Liang, G. 
1997Dexamethasone reduces cell surface levels of CD11b on human eosinophilsDas A.M.; Lim L.H.K. ; Flower R.J.; Perretti M.
2009Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbonsNi, X.; Liang, G. ; Wang, J.-S. ; Li, B. 
2015Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistorGuo Y.; Zhang, X.; Low, K. L. ; Lam, K.-T. ; Yeo Y.-C. ; Liang, G. 
Apr-2010Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistorsLam, K.-T.; Chin, S.-K.; Seah, D.W.; Bala Kumar, S. ; Liang, G. 
18-Jun-2018Electric-field-induced three-terminal pMTJ switching in the absence of an external magnetic fieldDeng, Jiefang; Fong, Xuanyao ; Liang, Gengchiau 
4-Jun-2008Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowireYang, W.F.; Lee, S.J. ; Liang, G.C. ; Whang, S.J. ; Kwong, D.L.
2012Electronic structure of bilayer graphene nanoribbon and its device application: A computational studyLam, K.-T.; Liang, G. 
Apr-2011Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbonLam, K.-T.; Yang, Y.; Samudra, G.S. ; Yeo, Y.-C. ; Liang, G.