Browsing by Author LIANG GENGCHIAU

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Issue DateTitleAuthor(s)
Nov-2010Device physics and characteristics of graphene nanoribbon tunneling FETsChin, S.-K.; Seah, D.; Lam, K.-T.; Samudra, G.S. ; Liang, G. 
1997Dexamethasone reduces cell surface levels of CD11b on human eosinophilsDas A.M.; Lim L.H.K. ; Flower R.J.; Perretti M.
2009Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbonsNi, X.; Liang, G. ; Wang, J.-S. ; Li, B. 
2015Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistorGuo Y.; Zhang, X.; Low, K. L. ; Lam, K.-T. ; Yeo Y.-C. ; Liang, G. 
Apr-2010Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistorsLam, K.-T.; Chin, S.-K.; Seah, D.W.; Bala Kumar, S. ; Liang, G. 
18-Jun-2018Electric-field-induced three-terminal pMTJ switching in the absence of an external magnetic fieldDeng, Jiefang; Fong, Xuanyao ; Liang, Gengchiau 
4-Jun-2008Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowireYang, W.F.; Lee, S.J. ; Liang, G.C. ; Whang, S.J. ; Kwong, D.L.
2012Electronic structure of bilayer graphene nanoribbon and its device application: A computational studyLam, K.-T.; Liang, G. 
Apr-2011Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbonLam, K.-T.; Yang, Y.; Samudra, G.S. ; Yeo, Y.-C. ; Liang, G. 
27-Jun-2011Enhanced Faraday rotation in magnetophotonic crystal infiltrated with grapheneDa, H. ; Liang, G. 
26-Sep-2018FANTASI: a novel device-to-circuits simulation framework for fast estimation of write error rates in spintronicsMiriyala, Pavan ; Fong Xuanyao ; Liang, Gengchiau 
2010Geometry effects on thermoelectric properties of silicon nanowires based on electronic band structuresLiang, G. ; Huang, W.; Koong, C.S.; Wang, J.-S. ; Lan, J.
2014Germanium-Tin on Si avalanche photodiode: Device design and technology demonstrationDong, Y.; Wang, W. ; Xu, X.; Gong, X. ; Lei, D.; Zhou, Q. ; Xu, Z.; Loke, W.K.; Yoon, S.-F.; Liang, G. ; Yeo, Y.-C. 
May-2012Graphene nanoribbon tunneling field-effect transistors with a semiconducting and a semimetallic heterojunction channelDa, H. ; Lam, K.-T.; Samudra, G. ; Chin, S.-K.; Liang, G. 
9-Mar-2011Graphene-based spin caloritronicsZeng, M. ; Feng, Y. ; Liang, G. 
22-Aug-2011High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effectsLiang, G. ; Bala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.
2008Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistorsPeng, J.W.; Lee, S.J. ; Liang, G.C.A. ; Singh, N.; Zhu, S.Y.; Lo, G.Q.; Kwong, D.L.
Nov-2012Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistorsDa, H. ; Lam, K.-T.; Samudra, G.S. ; Liang, G. ; Chin, S.-K.
2010Influence of edge roughness on graphene nanoribbon resonant tunnelling diodesLiang, G. ; Khalid, S.B.; Lam, K.-T.
1-Feb-2019Influence of Size and Shape on the Performance of VCMA-Based MTJsMiriyala, Venkata Pavan Kumar ; Fong, Xuanyao ; Liang, Gengchiau