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PARK CHANG SEO
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Showing results 3 to 13 of 13
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Issue Date
Title
Author(s)
Nov-2005
Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning
Park, C.S.
;
Cho, B.J.
2005
Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric
Park, C.S.
;
Cho, B.J.
;
Hwang, W.S.
;
Loh, W.Y.
;
Tang, L.J.
;
Kwong, D.-L.
Sep-2004
Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process
Park, C.S.
;
Cho, B.J.
;
Balasubramanian, N.
;
Kwong, D.-L.
May-2006
Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack
Joo, M.S.
;
Park, C.S.
;
Cho, B.J.
;
Balasubramanian, N.
;
Kwong, D.-L.
8-Jan-2008
Method of fabricating a CMOS device with dual metal gate electrodes
PARK, CHANG SEO
;
CHO, BYUNG JIN
;
BALASUBRAMANIAN, NARAYANAN T.
Nov-2004
MOS characteristics of substituted Al gate on high-κ dielectric
Park, C.S.
;
Cho, B.J.
;
Kwong, D.-L.
Nov-2004
MOS characteristics of substituted Al gate on high-κ dielectric
Park, C.S.
;
Cho, B.J.
;
Kwong, D.-L.
Sep-2004
MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2
Park, C.S.
;
Cho, B.J.
;
Kwong, D.-L.
2004
Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free
Park, C.S.
;
Cho, B.J.
;
Tang, L.J.
;
Kwong, D.-L.
7-Dec-2006
Thermally stable fully silicided Hf silicide metal gate electrode
PARK, CHANG SEO
;
CHO, BYUNG JIN
Jun-2004
Thermally stable fully silicided Hf-silicide metal-gate electrode
Park, C.S.
;
Cho, B.J.
;
Kwong, D.-L.