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| Issue Date | Title | Author(s) |
| 2003 | A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer | Park, C.S. ; Cho, B.J. ; Yan, D.A.; Balasubramanian, N.; Kwong, D.-L. |
| May-2003 | An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer | Park, C.S. ; Cho, B.J. ; Kwong, D.-L. |
| Nov-2005 | Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning | Park, C.S. ; Cho, B.J. |
| 2005 | Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric | Park, C.S. ; Cho, B.J. ; Hwang, W.S.; Loh, W.Y.; Tang, L.J.; Kwong, D.-L. |
| Sep-2004 | Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process | Park, C.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L. |
| May-2006 | Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack | Joo, M.S. ; Park, C.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L. |
| 8-Jan-2008 | Method of fabricating a CMOS device with dual metal gate electrodes | PARK, CHANG SEO ; CHO, BYUNG JIN ; BALASUBRAMANIAN, NARAYANAN T. |
| Nov-2004 | MOS characteristics of substituted Al gate on high-κ dielectric | Park, C.S. ; Cho, B.J. ; Kwong, D.-L. |
| Nov-2004 | MOS characteristics of substituted Al gate on high-κ dielectric | Park, C.S. ; Cho, B.J. ; Kwong, D.-L. |
| Sep-2004 | MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2 | Park, C.S. ; Cho, B.J. ; Kwong, D.-L. |
| 2004 | Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free | Park, C.S. ; Cho, B.J. ; Tang, L.J.; Kwong, D.-L. |
| 7-Dec-2006 | Thermally stable fully silicided Hf silicide metal gate electrode | PARK, CHANG SEO ; CHO, BYUNG JIN |
| Jun-2004 | Thermally stable fully silicided Hf-silicide metal-gate electrode | Park, C.S. ; Cho, B.J. ; Kwong, D.-L. |
