Browsing by Author Yang Hyunsoo

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Showing results 79 to 90 of 90 < previous 
Issue DateTitleAuthor(s)
2012The effect of dust on transmission and self-cleaning property of solar panelsHee, J.Y.; Kumar, L.V. ; Danner, A.J. ; Yang, H. ; Bhatia, C.S. 
22-Aug-2011The role of charge traps in inducing hysteresis: Capacitance-voltage measurements on top gated bilayer grapheneKalon, G. ; Jun Shin, Y.; Giang Truong, V.; Kalitsov, A.; Yang, H. 
2012The role of Mg interface layer in MgO magnetic tunnel junctions with CoFe and CoFeB electrodesYang, H. ; Yang, S.-H.; Parkin, S.
12-Mar-2014Thermally assisted domain wall nucleation in perpendicular anisotropy trilayer nanowiresNarayanapillai, K.; Qiu, X.; Rhensius, J.; Yang, H. 
22-Feb-2012TiO 2 thin films prepared via adsorptive self-assembly for self-cleaning applicationsXi, B.; Verma, L.K. ; Li, J.; Bhatia, C.S. ; Danner, A.J. ; Yang, H. ; Zeng, H.C. 
6-Jun-2011Tunable metal-insulator transitions in bilayer graphene by thermal annealingKalon, G. ; Shin, Y.J.; Yang, H. 
2018Tuning of current-induced effective magnetic field through Rashba effect engineering in hybrid multiferroic structuresLin W. ; Pollard S.D. ; Guo R.; Yoong H.Y.; Chen S. ; Wang H. ; Liu L. ; Li C. ; Yu X. ; Xiao J. ; Chi X. ; Yu J.; Zhou J. ; Zhou T. ; Yang H. ; Chen J. 
12-Sep-2012Tunneling behavior of bismuth telluride nanoplates in electrical transportEginligil, M.; Zhang, W.; Kalitsov, A.; Lu, X. ; Yang, H. 
20-Dec-2010Tunneling characteristics of grapheneShin, Y.J.; Kalon, G. ; Son, J.; Kwon, J.H.; Niu, J.; Bhatia, C.S. ; Liang, G. ; Yang, H. 
2012Ultrafine and high aspect ratio metal lines by electron beam lithography for silicon solar cell metallisationLiao, B.; Aberle, A.G. ; Mueller, T.; Verma, L.K. ; Danner, A.J. ; Yang, H. ; Bhatia, C.S. 
5-Nov-2012Ultrathin Si/C graded layer to improve tribological properties of Co magnetic filmsRismani, E.; Samad, M.A.; Sinha, S.K. ; Yeo, R.; Yang, H. ; Bhatia, C.S. 
26-Nov-2012Universal scaling of resistivity in bilayer grapheneGopinadhan, K. ; Jun Shin, Y.; Yang, H.