Browsing by Author CHENG RAN

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 10 to 17 of 17 < previous 
Issue DateTitleAuthor(s)
21-Feb-2013Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressorDing, Y.; Cheng, R. ; Du, A.; Yeo, Y.-C. 
2011Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channelCheng, R. ; Ding, Y.; Liu, B.; Yeo, Y.-C. 
2013Phase change liner stressor for strain engineering of P-channel FinFETsDing, Y.; Cheng, R. ; Koh, S.-M.; Liu, B.; Yeo, Y.-C. 
2013Relaxed and strained patterned germanium-tin structures: A Raman scattering studyCheng, R. ; Wang, W.; Gong, X.; Sun, L.; Guo, P.; Hu, H.; Shen, Z.; Han, G. ; Yeo, Y.-C. 
2012Strain engineering of ultra-thin silicon-on-insulator structures using ion implantDing, Y.; Cheng, R. ; Zhou, Q. ; Du, A.; Daval, N.; Nguyen, B.-Y.; Yeo, Y.-C. 
2013Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallizationDing, Y.; Cheng, R. ; Zhou, Q. ; Du, A.; Daval, N.; Nguyen, B.-Y.; Yeo, Y.-C. 
2012Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technologyGong, X.; Zhu, Z.; Kong, E.; Cheng, R. ; Subramanian, S.; Goh, K.H.; Yeo, Y.-C. 
2013Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technologyGong, X.; Han, G. ; Su, S.; Cheng, R. ; Guo, P.; Bai, F.; Yang, Y.; Zhou, Q. ; Liu, B.; Goh, K.H.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.-C.