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Showing results 11 to 30 of 57
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Issue Date
Title
Author(s)
Jul-2008
Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors
Tan, K.-M.
;
Fang, W.-W.
;
Yang, M.
;
Liow, T.-Y.
;
Lee, R.T.-P.
;
Balasubramanian, N.
;
Yeo, Y.-C.
Sep-2006
Drive-current enhancement in FinFETs using gate-induced stress
Tan, K.-M.
;
Liow, T.-Y.
;
Lee, R.T.P.
;
Tung, C.-H.
;
Samudra, G.S.
;
Yoo, W.-J.
;
Yeo, Y.-C.
2009
Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films
Lim, P.S.Y.
;
Lee, R.T.P.
;
Sinha, M.
;
Chi, D.Z.
;
Yeo, Y.-C.
25-Apr-2008
Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction
Lim, A.E.-J.
;
Lee, R.T.P.
;
Koh, A.T.Y.
;
Samudra, G.S.
;
Kwong, D.-L.
;
Yeo, Y.-C.
Apr-2006
Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications
Lim, A.E.-J.
;
Lee, R.T.P.
;
Tung, C.H.
;
Tripathy, S.
;
Kwong, D.-L.
;
Yeo, Y.-C.
Jul-2008
Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Zhu, M.
;
Tan, B.L.-H.
;
Balasubramanian, N.
;
Yeo, Y.-C.
2007
Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers
Lim, A.E.-J.
;
Fang, W.-W.
;
Liu, F.
;
Lee, R.T.P.
;
Samudra, G.
;
Kwong, D.-L.
;
Yeo, Y.-C.
2009
Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement
Sinha, M.
;
Lee, R.T.P.
;
Devi, S.N.
;
Lo, G.-Q.
;
Chor, E.F.
;
Yeo, Y.-C.
2007
Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers
Lim, A.E.-J.
;
Fang, W.-W.
;
Liu, F.
;
Lee, R.T.P.
;
Samudra, G.S.
;
Kwong, D.-L.
;
Yeo, Y.-C.
2006
Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistors
Yao, H.B.
;
Tan, C.C.
;
Liew, S.L.
;
Chua, C.T.
;
Chua, C.K.
;
Li, R.
;
Lee, R.T.P.
;
Lee, S.J.
;
Chi, D.Z.
2007
Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressors
Lee, R.T.P.
;
Yang, L.-T.
;
Ang, K.-W.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Wong, A.S.-W.
;
Samudra, G.S.
;
Chi, D.-Z.
;
Yeo, Y.-C.
Aug-2008
Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interface
Lim, A.E.-J.
;
Lee, R.T.P.
;
Samudra, G.S.
;
Kwong, D.-L.
;
Yeo, Y.-C.
Nov-2007
N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Tung, C.-H.
;
Samudra, G.S.
;
Balasubramanian, N.
;
Yeo, Y.-C.
Feb-2007
N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
Lee, R.T.P.
;
Lim, A.E.-J.
;
Tan, K.-M.
;
Liow, T.-Y.
;
Lo, G.-Q.
;
Samudra, G.S.
;
Chi, D.Z.
;
Yeo, Y.-C.
2008
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors
Koh, A.T.-Y.
;
Lee, R.T.-P.
;
Lim, A.E.-J.
;
Lai, D.M.-Y.
;
Chi, D.-Z.
;
Hoe, K.-M.
;
Balasubramanian, N.
;
Samudra, G.S.
;
Yeo, Y.-C.
Jan-2008
Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
Lee, R.T.P.
;
Yang, L.-T.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Lim, A.E.-J.
;
Ang, K.-W.
;
Lai, D.M.Y.
;
Hoe, K.M.
;
Lo, G.-Q.
;
Samudra, G.S.
;
Chi, D.Z.
;
Yeo, Y.-C.
2008
Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance
Lee, R.T.-P.
;
Koh, A.T.-Y.
;
Fang, W.-W.
;
Tan, K.-M.
;
Lim, A.E.-J.
;
Liow, T.-Y.
;
Chow, S.-Y.
;
Yong, A.M.
;
Hoong, S.W.
;
Lo, G.-Q.
;
Samudra, G.S.
;
Chi, D.-Z.
;
Yeo, Y.-C.
2007
Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs
Lee, R.T.P.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Lim, A.E.-J.
;
Ho, C.-S.
;
Hoe, K.-M.
;
Lai, M.Y.
;
Osipowicz, T.
;
Lo, G.-Q.
;
Samudra, G.
;
Chi, D.-Z.
;
Yeo, Y.-C.
25-Apr-2008
Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor
Tan, K.-M.
;
Liow, T.-Y.
;
Lee, R.T.P.
;
Zhu, M.
;
Hoe, K.-M.
;
Tung, C.-H.
;
Balasubramanian, N.
;
Samudra, G.S.
;
Yeo, Y.-C.
2006
Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length
Lee, R.T.P.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Lim, A.E.-J.
;
Wong, H.-S.
;
Lim, P.-C.
;
Lai, D.M.Y.
;
Lo, G.-Q.
;
Tung, C.-H.
;
Samudra, G.
;
Chi, D.-Z.
;
Yeo, Y.-C.