Browsing by Author LEE TEK PO,RINUS

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Showing results 52 to 57 of 57 < previous 
Issue DateTitleAuthor(s)
2007Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETsLee, R.T.P. ; Tan, K.-M.; Liow, T.-Y.; Lim, A.E.-J.; Lo, G.-Q.; Samudra', G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
24-Apr-2007Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
2009Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistanceLee, R.T.-P. ; Lim, A.E.-J.; Tan, K.-M.; Liow, T.-Y.; Chi, D.Z.; Yeo, Y.-C. 
2009The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressorsLee, R.T.P. ; Koh, A.T.-Y.; Tan, K.-M.; Liow, T.-Y.; Chi, D.Z.; Yeo, Y.-C. 
2009Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistorsTan, K.-M.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Yeo, Y.-C. 
Jun-2007Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFETLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.H.; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C.