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Showing results 35 to 54 of 57
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Issue Date
Title
Author(s)
2008
Photoemission study of energy band alignment of Ge2Sb 2Te5 and common CMOS materials
Fang, L.W.-W.
;
Pan, J.-S.
;
Lim, A.E.-J.
;
Lee, R.T.-P.
;
Li, M.
;
Zhao, R.
;
Shi, L.
;
Chong, T.-C.
;
Yeo, Y.-C.
2009
Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
Lee, R.T.P.
;
Chi, D.Z.
;
Yeo, Y.-C.
2007
Probing the ErSi1.7 Phase formation by micro-Raman spectroscopy
Lee, R.T.-P.
;
Tan, K.-M.
;
Liow, T.-Y.
;
Ho, C.-S.
;
Tripathy, S.
;
Samudra, G.S.
;
Chi, D.-Z.
;
Yeo, Y.-C.
2006
Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain
Lee, R.T.P.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Ang, K.-W.
;
Chui, K.-J.
;
Guo, Q.-L.
;
Samudra, G.
;
Chi, D.-Z.
;
Yeo, Y.-C.
May-2008
Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration
Koh, A.T.-Y.
;
Lee, R.T.-P.
;
Liu, F.-Y.
;
Liow, T.-Y.
;
Tan, K.M.
;
Wang, X.
;
Samudra, G.S.
;
Balasubramanian, N.
;
Chi, D.-Z.
;
Yeo, Y.-C.
2007
Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing
Lee, R.T.-P.
;
Koh, A.T.-Y.
;
Liu, F.-Y.
;
Fang, W.-W.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Lim, P.-C.
;
Lim, A.E.-J.
;
Zhu, M.
;
Hoe, K.-M.
;
Tung, C.-H.
;
Lo, G.-Q.
;
Wang, X.
;
Low, D.K.-Y.
;
Samudra, G.S.
;
Chi, D.-Z.
;
Yeo, Y.-C.
Dec-2009
Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs
Sinha, M.
;
Lee, R.T.P.
;
Chor, E.F.
;
Yeo, Y.-C.
2008
Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors
Wong, H.-S.
;
Liu, F.-Y.
;
Ang, K.-W.
;
Koh, S.-M.
;
Koh, A.T.-Y.
;
Liow, T.-Y.
;
Lee, R.T.-P.
;
Lim, A.E.-J.
;
Fang, W.-W.
;
Zhu, M.
;
Chan, L.
;
Balasubramaniam, N.
;
Samudra, G.
;
Yeo, Y.-C.
2009
Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
Koh, S.-M.
;
Zhou, W.J.
;
Lee, R.T.P.
;
Sinha, M.
;
Ng, C.-M.
;
Zhao, Z.
;
Maynard, H.
;
Variam, N.
;
Erokhin, Y.
;
Samudra, G.
;
Yeo, Y.-C.
2009
Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant
Sinha, M.
;
Lee, R.T.P.
;
Devi, S.N.
;
Lo, G.-Q.
;
Eng, F.C.
;
Yeo, Y.-C.
Jan-2008
Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Zhu, M.
;
Hoe, K.-M.
;
Samudra, G.S.
;
Balasubramanian, N.
;
Yeo, Y.-C.
2008
Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Zhu, M.
;
Hoe, K.-M.
;
Samudra, G.S.
;
Balasubramanian, N.
;
Yeo, Y.-C.
2008
Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content
Liow, T.-Y.
;
Tan, K.-M.
;
Weeks, D.
;
Lee, R.T.P.
;
Zhu, M.
;
Hoe, K.-M.
;
Tung, C.-H.
;
Bauer, M.
;
Spear, J.
;
Thomas, S.G.
;
Samudra, G.S.
;
Balasubramanian, N.
;
Yeo, Y.-C.
2008
Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content
Liow, T.-Y.
;
Tan, K.-M.
;
Weeks, D.
;
Lee, R.T.P.
;
Zhu, M.
;
Hoe, K.-M.
;
Tung, C.-H.
;
Bauer, M.
;
Spear, J.
;
Thomas, S.G.
;
Samudra, G.S.
;
Balasubramanian, N.
;
Yeo, Y.-C.
2006
Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Du, A.
;
Tung, C.-H.
;
Samudra, G.S.
;
Yoo, W.-J.
;
Balasubramanian, N.
;
Yeo, Y.-C.
Oct-2007
Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
Tan, K.-M.
;
Liow, T.-Y.
;
Lee, R.T.P.
;
Hoe, K.M.
;
Tung, C.-H.
;
Balasubramanian, N.
;
Samudra, G.S.
;
Yeo, Y.-C.
2008
Strained silicon nanowire transistors with germanium source and drain stressors
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Zhu, M.
;
Tan, B.L.-H.
;
Balasubramanian, N.
;
Yeo, Y.-C.
2007
Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETs
Lee, R.T.P.
;
Tan, K.-M.
;
Liow, T.-Y.
;
Lim, A.E.-J.
;
Lo, G.-Q.
;
Samudra', G.S.
;
Chi, D.-Z.
;
Yeo, Y.-C.
24-Apr-2007
Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
Tan, K.-M.
;
Liow, T.-Y.
;
Lee, R.T.P.
;
Chui, K.-J.
;
Tung, C.-H.
;
Balasubramanian, N.
;
Samudra, G.S.
;
Yoo, W.-J.
;
Yeo, Y.-C.
2009
Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance
Lee, R.T.-P.
;
Lim, A.E.-J.
;
Tan, K.-M.
;
Liow, T.-Y.
;
Chi, D.Z.
;
Yeo, Y.-C.