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Issue DateTitleAuthor(s)
2007A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistorsTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
2008A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistorsWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Lee, R.T.-P. ; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
Apr-2008Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widthsLee, R.T.-P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Koh, A.T.-Y.; Zhu, M. ; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
2009Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregationSinha, M.; Lee, R.T.P. ; Lohani, A.; Mhaisalkar, S.; Chor, E.F. ; Yeo, Y.-C. 
2009Advanced contact technology for MOSFETs: Integration of new materials for series resistance reductionYeo, Y.-C. ; Lee, R.T.-P. 
2008Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayersLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.-H.; Lai, D.M.Y.; Samudra, G. ; Kwong, D.-L.; Yeo, Y.-C. 
2006Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancementLiow, T.-Y.; Tan, K.-M.; Chin, H.-C.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
Jun-2010Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drainSinha, M.; Lee, R.T.P. ; Chor, E.F. ; Yeo, Y.-C. 
Jul-2008Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistorsTan, K.-M.; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.-P. ; Balasubramanian, N.; Yeo, Y.-C. 
Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
2009Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon filmsLim, P.S.Y.; Lee, R.T.P. ; Sinha, M.; Chi, D.Z.; Yeo, Y.-C. 
25-Apr-2008Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reductionLim, A.E.-J.; Lee, R.T.P. ; Koh, A.T.Y.; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
Apr-2006Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applicationsLim, A.E.-J.; Lee, R.T.P. ; Tung, C.H.; Tripathy, S.; Kwong, D.-L.; Yeo, Y.-C. 
Jul-2008Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Balasubramanian, N.; Yeo, Y.-C. 
2007Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G. ; Kwong, D.-L. ; Yeo, Y.-C. 
2009Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancementSinha, M.; Lee, R.T.P. ; Devi, S.N.; Lo, G.-Q.; Chor, E.F. ; Yeo, Y.-C. 
2007Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
2006Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistorsYao, H.B.; Tan, C.C.; Liew, S.L.; Chua, C.T.; Chua, C.K.; Li, R.; Lee, R.T.P. ; Lee, S.J. ; Chi, D.Z.
2007Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressorsLee, R.T.P. ; Yang, L.-T.; Ang, K.-W.; Liow, T.-Y.; Tan, K.-M.; Wong, A.S.-W.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
Aug-2008Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interfaceLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C.