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Ramam, Akkipeddi
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Showing results 11 to 22 of 22
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Issue Date
Title
Author(s)
Mar-1998
Features of InGaAlAs/InP heterostructures
Ramam, A.
;
Chua, S.J.
Mar-1998
Features of InGaAlAs/InP heterostructures
Ramam, A.
;
Chua, S.J.
Jun-2000
Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
Tan, L.S.
;
Prakash, S.
;
Ng, K.M.
;
Ramam, A.
;
Chua, S.J.
;
Wee, A.T.S.
;
Lim, S.L.
Feb-1995
Growth and investigation of quaternary III-III-III-V InGaAlAs alloy layers on InP by molecular beam epitaxy
Feng, Z.C.
;
Chua, S.J.
;
Raman, A.
;
Williams, K.J.
2-Nov-1995
Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy
Ramam, A.
;
Chua, S.J.
;
Karunasiri, G.
;
Vaya, P.R.
Apr-2000
Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples
Remashan, K.
;
Chua, S.J.
;
Ramam, A.
;
Prakash, S.
;
Liu, W.
15-Dec-1996
Lattice vibrations in In1-x-yGaxAlxAs quaternary alloys
Ramam, A.
;
Chua, S.J.
May-1997
Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy
Ramam, A.
;
Chua, S.J.
May-1996
Molecular-beam epitaxy of high quality lattice matched In1-x-yGaxAlyAs epitaxial layers on InP substrates
Chua, S.J.
;
Ramam, A.
1997
Schottky contacts and conduction band offsets in bandgap engineered InGaAlAs/InP heterostructures
Chua, S.J.
;
Ramam, A.
1997
Schottky contacts and conduction band offsets in bandgap engineered InGaAlAs/InP heterostructures
Chua, S.J.
;
Ramam, A.
1-Jan-2000
Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition
Choi, W.K.
;
Chen, J.H.
;
Bera, L.K.
;
Feng, W.
;
Pey, K.L.
;
Mi, J.
;
Yang, C.Y.
;
Ramam, A.
;
Chua, S.J.
;
Pan, J.S.
;
Wee, A.T.S.
;
Liu, R.