Browsing by Author Ramam, Akkipeddi

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Showing results 11 to 22 of 22 < previous 
Issue DateTitleAuthor(s)
Mar-1998Features of InGaAlAs/InP heterostructuresRamam, A. ; Chua, S.J. 
Mar-1998Features of InGaAlAs/InP heterostructuresRamam, A. ; Chua, S.J. 
Jun-2000Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealingTan, L.S. ; Prakash, S. ; Ng, K.M.; Ramam, A. ; Chua, S.J. ; Wee, A.T.S. ; Lim, S.L. 
Feb-1995Growth and investigation of quaternary III-III-III-V InGaAlAs alloy layers on InP by molecular beam epitaxyFeng, Z.C. ; Chua, S.J. ; Raman, A. ; Williams, K.J.
2-Nov-1995Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxyRamam, A. ; Chua, S.J. ; Karunasiri, G. ; Vaya, P.R. 
Apr-2000Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samplesRemashan, K.; Chua, S.J. ; Ramam, A. ; Prakash, S. ; Liu, W.
15-Dec-1996Lattice vibrations in In1-x-yGaxAlxAs quaternary alloysRamam, A. ; Chua, S.J. 
May-1997Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxyRamam, A. ; Chua, S.J. 
May-1996Molecular-beam epitaxy of high quality lattice matched In1-x-yGaxAlyAs epitaxial layers on InP substratesChua, S.J. ; Ramam, A. 
1997Schottky contacts and conduction band offsets in bandgap engineered InGaAlAs/InP heterostructuresChua, S.J. ; Ramam, A. 
1997Schottky contacts and conduction band offsets in bandgap engineered InGaAlAs/InP heterostructuresChua, S.J. ; Ramam, A. 
1-Jan-2000Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor depositionChoi, W.K. ; Chen, J.H. ; Bera, L.K. ; Feng, W.; Pey, K.L. ; Mi, J.; Yang, C.Y.; Ramam, A. ; Chua, S.J. ; Pan, J.S. ; Wee, A.T.S. ; Liu, R.