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Issue DateTitleAuthor(s)
Jul-1999DC voltage-voltage method to measure the interface traps in sub-micron MOSTsJie, B.B.; Li, M.F. ; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
2007Deep-depletion physics-based analytical model for scanning capacitance microscopy carrier profile extractionWong, K.M. ; Chim, W.K. 
1996Degradation monitor for the light output of LEDs based on cathodoluminescence signals and junction ideality factorWittpahl, V.; Liu, Y.Y.; Chan, D.S.H. ; Chim, W.K. ; Phang, J.C.H. ; Balk, L.J.; Yan, K.P.
Jul-1996Design and performance of a new spectroscopic photon emission microscope system for the physical analysis of semiconductor devicesChan, D.S.H. ; Phang, J.C.H. ; Chim, W.K. ; Liu, Y.Y.; Tao, J.M. 
May-1996Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurementsChen, T.P. ; Chan, D.S.H. ; Chim, W.K. 
2015Detrimental effects of oxygen vacancies in electrochromic molybdenum oxideBinayak Dasgupta; Ren Yi; Wong Lai Mun; Kong Lingyu; Tok Eng Soon ; Chim Wai Kin ; Chiam Sing Yang
10-Jun-2011Diameter dependence of the void formation in the oxidation of nickel nanowiresRen, Y.; Chiam, S.Y.; Chim, W.K. 
1997Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structureJie, B.B.; Li, M.F. ; Lou, C.L.; Lo, K.F.; Chim, W.K. ; Chan, D.S.H. 
7-Sep-1997Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopyChim, W.K. ; Chan, D.S.H. ; Tao, J.M. ; Lou, C.L.; Leang, S.E.; Teow, C.K.
24-Jun-2002Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulationChim, W.K. ; Wong, K.M. ; Teo, Y.L.; Lei, Y. ; Yeow, Y.T.
2004Dopant profile extraction by inverse modeling of scanning capacitance microscopy using peak dC/dVHong, Y.D.; Yan, J.; Wong, K.M. ; Yeow, Y.T.; Chim, W.K. 
8-Sep-2003Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrixKan, E.W.H.; Choi, W.K. ; Leoy, C.C.; Chim, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.
28-Apr-2006Effect of germanium concentration and oxide diffusion barrier on the formation and distribution of germanium nanocrystals in silicon oxide matrixChew, H.G.; Choi, W.K. ; Foo, Y.L.; Zheng, F.; Chim, W.K. ; Voon, Z.J.; Seow, K.C.; Fitzgerald, E.A.; Lai, D.M.Y.
27-Oct-2003Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structureHo, V.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Tay, M.S.; Antoniadis, D.A.; Fitzgerald, E.A.; Du, A.Y.; Tung, C.H.; Liu, R. ; Wee, A.T.S. 
2001Effect of transmission line pulsing of interconnects investigated using combined low-frequency noise and resistance measurementsChu, L.W.; Chim, W.K. ; Pey, K.L. ; See, A. 
1997Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single deviceLou, C.L.; Tan, C.B.; Chim, W.K. ; Chan, D.S.H. 
2008Effects of annealing on the valence band offsets between hafnium aluminate and siliconChiam, S.Y.; Chim, W.K. ; Ren, Y.; Pi, C.; Pan, J.S.; Huan, A.C.H.; Wang, S.J.; Zhang, J.
Aug-2012Effects of electric field in band alignment measurements using photoelectron spectroscopyChiam, S.Y.; Liu, Z.Q.; Pan, J.S.; Manippady, K.K.; Wong, L.M.; Chim, W.K. 
1-Oct-2000Effects of high current conduction in sub-micron Ti-silicided filmsGan, C.L.; Pey, K.L. ; Chim, W.K. ; Siah, S.Y.
Apr-2003Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structureHeng, C.L.; Teo, L.W.; Ho, V.; Tay, M.S.; Lei, Y.; Choi, W.K. ; Chim, W.K.