Browsing by Author HOU YONG TIAN

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Showing results 13 to 32 of 39 < previous   next >
Issue DateTitleAuthor(s)
2004Impact of metal gate work function on nano CMOS device performanceHou, Y.T. ; Low, T.; Xu, B.; Li, M.-F. ; Samudra, G. ; Kwong, D.L.
May-2003Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFETLow, T.; Hou, Y.-T. ; Li, M.-F. 
May-2003Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFETLow, T.; Hou, Y.-T. ; Li, M.-F. 
15-Nov-1999Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphireHou, Y.T. ; Feng, Z.C.; Chua, S.J. ; Li, M.F. ; Akutsu, N.; Matsumoto, K.
15-Nov-1999Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphireHou, Y.T. ; Feng, Z.C.; Chua, S.J. ; Li, M.F. ; Akutsu, N.; Matsumoto, K.
Dec-2001Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substratesFeng, Z.C.; Yang, T.R.; Hou, Y.T. 
Dec-2001Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substratesFeng, Z.C.; Yang, T.R.; Hou, Y.T. 
Nov-1999Infrared reflectance investigation of undoped and Si-doped GaN films on sapphireFeng, Z.C.; Hou, Y.T. ; Li, M.F. ; Chua, S.J. ; Wang, W.; Zhu, L.
Nov-1999Infrared reflectance investigation of undoped and Si-doped GaN films on sapphireFeng, Z.C.; Hou, Y.T. ; Li, M.F. ; Chua, S.J. ; Wang, W.; Zhu, L.
Jun-2001Infrared reflectance of GaN films grown on Si(001) substratesZhang, X. ; Hou, Y.-T. ; Feng, Z.-C.; Chen, J.-L.
Jun-2001Infrared reflectance of GaN films grown on Si(001) substratesZhang, X. ; Hou, Y.-T. ; Feng, Z.-C.; Chen, J.-L.
1999Infrared reflectance studies of GaN epitaxial films on sapphire substrateFeng, Z.C.; Hou, Y.T. ; Chua, S.J. ; Li, M.F. 
1999Infrared reflectance studies of GaN epitaxial films on sapphire substrateFeng, Z.C.; Hou, Y.T. ; Chua, S.J. ; Li, M.F. 
Jul-2002Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETsYu, H. ; Hou, Y.-T. ; Li, M.-F. ; Kwong, D.-L.
2003Investigation of Performance Limits of Germanium Double-Gated MOSFETsLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L.
Jan-2004Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel DiodesLin, C.Y.; Chin, A.; Hou, Y.T. ; Li, M.F. ; McAlister, S.P.; Kwong, D.L.
Nov-2004Metal gate work function engineering on gate leakage of MOSFETsHou, Y.-T. ; Li, M.-F. ; Low, T.; Kwong, D.-L.
18-Jun-2001Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistorsHou, Y.T. ; Li, M.F. ; Lai, W.H.; Jin, Y.
18-Jun-2001Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistorsHou, Y.T. ; Li, M.F. ; Lai, W.H.; Jin, Y.
Feb-2003Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacksHou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Kwong, D.-L.