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HOU YONG TIAN
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Showing results 3 to 22 of 39
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Issue Date
Title
Author(s)
1999
Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scattering
Hou, Y.T.
;
Feng, Z.C.
;
Li, M.F.
;
Chua, S.J.
30-May-2000
Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates
Hou, Y.T.
;
Feng, Z.C.
;
Chen, J.
;
Zhang, X.
;
Chua, S.J.
;
Lin, J.Y.
May-2002
Direct tunneling currents through gate dielectrics in deep submicron MOSFETs
Hou, Y.
;
Li, M.
;
Jin, Y.
1-Jan-2002
Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
Hou, Y.T.
;
Li, M.F.
;
Jin, Y.
;
Lai, W.H.
20-Sep-2004
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
Low, T.
;
Li, M.F.
;
Shen, C.
;
Yeo, Y.-C.
;
Hou, Y.T.
;
Zhu, C.
;
Chin, A.
;
Kwong, D.L.
Mar-2004
Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack
Ren, C.
;
Yu, H.Y.
;
Kang, J.F.
;
Hou, Y.T.
;
Li, M.-F.
;
Wang, W.D.
;
Chan, D.S.H.
;
Kwong, D.-L.
2003
Germanium MOS: An Evaluation from Carrier Quantization and Tunneling Current
Low, T.
;
Hou, Y.T.
;
Li, M.F.
;
Zhu, C.
;
Kwong, D.-L.
;
Chin, A.
Jun-2001
Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation
Hou, Y.T.
;
Li, M.-F.
May-2002
Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs
Yu, H.Y.
;
Hou, Y.T.
;
Li, M.F.
;
Kwong, D.-L.
May-2002
Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs
Yu, H.Y.
;
Hou, Y.T.
;
Li, M.F.
;
Kwong, D.-L.
2004
Impact of metal gate work function on nano CMOS device performance
Hou, Y.T.
;
Low, T.
;
Xu, B.
;
Li, M.-F.
;
Samudra, G.
;
Kwong, D.L.
May-2003
Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET
Low, T.
;
Hou, Y.-T.
;
Li, M.-F.
May-2003
Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET
Low, T.
;
Hou, Y.-T.
;
Li, M.-F.
15-Nov-1999
Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire
Hou, Y.T.
;
Feng, Z.C.
;
Chua, S.J.
;
Li, M.F.
;
Akutsu, N.
;
Matsumoto, K.
15-Nov-1999
Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire
Hou, Y.T.
;
Feng, Z.C.
;
Chua, S.J.
;
Li, M.F.
;
Akutsu, N.
;
Matsumoto, K.
Dec-2001
Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
Feng, Z.C.
;
Yang, T.R.
;
Hou, Y.T.
Dec-2001
Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
Feng, Z.C.
;
Yang, T.R.
;
Hou, Y.T.
Nov-1999
Infrared reflectance investigation of undoped and Si-doped GaN films on sapphire
Feng, Z.C.
;
Hou, Y.T.
;
Li, M.F.
;
Chua, S.J.
;
Wang, W.
;
Zhu, L.
Nov-1999
Infrared reflectance investigation of undoped and Si-doped GaN films on sapphire
Feng, Z.C.
;
Hou, Y.T.
;
Li, M.F.
;
Chua, S.J.
;
Wang, W.
;
Zhu, L.
Jun-2001
Infrared reflectance of GaN films grown on Si(001) substrates
Zhang, X.
;
Hou, Y.-T.
;
Feng, Z.-C.
;
Chen, J.-L.