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	Issue Date	Title	Author(s)
	Nov-1999	Infrared reflectance investigation of undoped and Si-doped GaN films on sapphire	Feng, Z.C.; Hou, Y.T. ; Li, M.F. ; Chua, S.J. ; Wang, W.; Zhu, L.
	Jun-2001	Infrared reflectance of GaN films grown on Si(001) substrates	Zhang, X. ; Hou, Y.-T. ; Feng, Z.-C.; Chen, J.-L.
	Jun-2001	Infrared reflectance of GaN films grown on Si(001) substrates	Zhang, X. ; Hou, Y.-T. ; Feng, Z.-C.; Chen, J.-L.
	1999	Infrared reflectance studies of GaN epitaxial films on sapphire substrate	Feng, Z.C.; Hou, Y.T. ; Chua, S.J. ; Li, M.F.
	1999	Infrared reflectance studies of GaN epitaxial films on sapphire substrate	Feng, Z.C.; Hou, Y.T. ; Chua, S.J. ; Li, M.F.
	Jul-2002	Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs	Yu, H. ; Hou, Y.-T. ; Li, M.-F. ; Kwong, D.-L.
	2003	Investigation of Performance Limits of Germanium Double-Gated MOSFETs	Low, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L.
	Jan-2004	Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes	Lin, C.Y.; Chin, A.; Hou, Y.T. ; Li, M.F. ; McAlister, S.P.; Kwong, D.L.
	Nov-2004	Metal gate work function engineering on gate leakage of MOSFETs	Hou, Y.-T. ; Li, M.-F. ; Low, T.; Kwong, D.-L.
	18-Jun-2001	Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors	Hou, Y.T. ; Li, M.F. ; Lai, W.H.; Jin, Y.
	18-Jun-2001	Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors	Hou, Y.T. ; Li, M.F. ; Lai, W.H.; Jin, Y.
	Feb-2003	Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks	Hou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Kwong, D.-L.
	1999	Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure	Hou, Yong Tian ; Teo, Kie Leong ; Li, Ming Fu ; Uchida, Kazuo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh
	1999	Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure	Hou, Yong Tian ; Teo, Kie Leong ; Li, Ming Fu ; Uchida, Kazuo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh
	2002	Quantum tunneling and scalability of HfO2 and HfAlO gate stacks	Hou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Jin, Y.; Kwong, D.-L.
	Feb-2004	Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications	Yu, H.Y. ; Kang, J.F. ; Ren, C.; Chen, J.D. ; Hou, Y.T. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Kwong, D.-L.
	2004	Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices	Li, M.F. ; Yu, H.Y. ; Hou, Y.T. ; Kang, J.F. ; Wang, X.P.; Shen, C.; Ren, C.; Yeo, Y.C. ; Zhu, C.X. ; Chan, D.S.H. ; Chin, A.; Kwong, D.L.
	1999	Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition	Chen, J.L.; Feng, Z.C. ; Zhang, X.; Chua, S.J. ; Hou, Y.T. ; Lin, J.
	2003	Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices	Yu, H.Y. ; Kang, J.F. ; Chen, J.D. ; Ren, C.; Hou, Y.T. ; Whang, S.J. ; Li, M.-F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Du, A.; Kwong, D.-L.

Showing results 21 to 39 of 39 < previous