Browsing by Author HOU YONG TIAN

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Showing results 21 to 39 of 39 < previous 
Issue DateTitleAuthor(s)
Nov-1999Infrared reflectance investigation of undoped and Si-doped GaN films on sapphireFeng, Z.C.; Hou, Y.T. ; Li, M.F. ; Chua, S.J. ; Wang, W.; Zhu, L.
Jun-2001Infrared reflectance of GaN films grown on Si(001) substratesZhang, X. ; Hou, Y.-T. ; Feng, Z.-C.; Chen, J.-L.
Jun-2001Infrared reflectance of GaN films grown on Si(001) substratesZhang, X. ; Hou, Y.-T. ; Feng, Z.-C.; Chen, J.-L.
1999Infrared reflectance studies of GaN epitaxial films on sapphire substrateFeng, Z.C.; Hou, Y.T. ; Chua, S.J. ; Li, M.F. 
1999Infrared reflectance studies of GaN epitaxial films on sapphire substrateFeng, Z.C.; Hou, Y.T. ; Chua, S.J. ; Li, M.F. 
Jul-2002Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETsYu, H. ; Hou, Y.-T. ; Li, M.-F. ; Kwong, D.-L.
2003Investigation of Performance Limits of Germanium Double-Gated MOSFETsLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L.
Jan-2004Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel DiodesLin, C.Y.; Chin, A.; Hou, Y.T. ; Li, M.F. ; McAlister, S.P.; Kwong, D.L.
Nov-2004Metal gate work function engineering on gate leakage of MOSFETsHou, Y.-T. ; Li, M.-F. ; Low, T.; Kwong, D.-L.
18-Jun-2001Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistorsHou, Y.T. ; Li, M.F. ; Lai, W.H.; Jin, Y.
18-Jun-2001Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistorsHou, Y.T. ; Li, M.F. ; Lai, W.H.; Jin, Y.
Feb-2003Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacksHou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Kwong, D.-L.
1999Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structureHou, Yong Tian ; Teo, Kie Leong ; Li, Ming Fu ; Uchida, Kazuo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh
1999Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structureHou, Yong Tian ; Teo, Kie Leong ; Li, Ming Fu ; Uchida, Kazuo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh
2002Quantum tunneling and scalability of HfO2 and HfAlO gate stacksHou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Jin, Y.; Kwong, D.-L.
Feb-2004Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device ApplicationsYu, H.Y. ; Kang, J.F. ; Ren, C.; Chen, J.D. ; Hou, Y.T. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Kwong, D.-L.
2004Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devicesLi, M.F. ; Yu, H.Y. ; Hou, Y.T. ; Kang, J.F. ; Wang, X.P.; Shen, C.; Ren, C.; Yeo, Y.C. ; Zhu, C.X. ; Chan, D.S.H. ; Chin, A.; Kwong, D.L.
1999Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor depositionChen, J.L.; Feng, Z.C. ; Zhang, X.; Chua, S.J. ; Hou, Y.T. ; Lin, J. 
2003Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS DevicesYu, H.Y. ; Kang, J.F. ; Chen, J.D. ; Ren, C.; Hou, Y.T. ; Whang, S.J. ; Li, M.-F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Du, A.; Kwong, D.-L.