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Browsing by Author KWONG,DIM-LEE

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Showing results 8 to 23 of 23 < previous 
Issue DateTitleAuthor(s)
2003HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC ApplicationsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A. ; Kwong, D.-L. 
2007Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G. ; Kwong, D.-L. ; Yeo, Y.-C. 
2007Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
Jan-2010Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platformAng, K.-W.; Liow, T.-Y.; Yu, M.-B.; Fang, Q.; Song, J.; Lo, G.-Q.; Kwong, D.-L. 
15-Aug-2007Low work function metal alloyYU HONGYU; JINGDE CHEN N. ; MINGFU LI N. ; KWONG DIM-LEE ; BIESEMANS SERGE; KITTL JORGE ADRIAN
15-Nov-2006Low work function metal alloyYU HONGYU; JINGDE CHEN N. ; MINGFU LI N. ; KWONG DIM-LEE ; BIESEMANS SERGE; KITTL JORGE ADRIAN
13-Jun-2007Low work function metal alloyYU HONGYU; JINGDE CHEN ; MINGFU LI ; KWONG DIM-LEE ; BIESEMANS SERGE
2005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
2008Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stackLin, J.; Lee, S.; Oh, H.-J.; Yang, W.; Lo, G.Q.; Kwong, D.L. ; Chi, D.Z.
2008Si nanowire CMOS transistors and circuits by top-down technology approachBalasubramanian, N. ; Singh, N.; Rustogi, S.C.; Buddharaju, K.D. ; Fu, J.; Hui, Z.; Balakumar, S.; Agarwal, A.; Manhas, S.K.; Lo, G.Q.; Kwong, D.L. 
Jan-2010Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimizationLiow, T.-Y.; Ang, K.-W.; Fang, Q.; Song, J.-F.; Xiong, Y.-Z.; Yu, M.-B.; Lo, G.-Q.; Kwong, D.-L. 
2008Taper couplers for coupling between laser and silicon waveguide with large allowable toleranceJing, Z.; Bihan, L.; Chandrappan, J.; Xin, Z.Q.; Ramana, P.V.; Prabhathan, P.; Shing, L.H.; Lee, K.D. ; Matham, M.V.
Nov-2008Temperature dependence of carrier transport of a silicon nanowire schottky-barrier field-effect transistorYang, W.F.; Lee, S.J. ; Liang, G.C. ; Eswar, R.; Sun, Z.Q.; Kwong, D.L. 
2006Transport characteristics of Si nanowires in bulk silicon and SOI wafersAgarwal, A.; Singh, N.; Liow, T.-Y.; Kumar, R. ; Balasubramanian, N. ; Kwong, D.L. 
Nov-2007Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devicesWang, X.P.; Lim, A.E.-J.; Yu, H.Y.; Li, M.-F. ; Ren, C.; Loh, W.-Y.; Zhu, C.X. ; Chin, A. ; Trigg, A.D.; Yeo, Y.-C. ; Biesemans, S.; Lo, G.-Q.; Kwong, D.-L. 
Showing results 8 to 23 of 23 < previous