Browsing by Author ANG DIING SHENP

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Showing results 8 to 20 of 20 < previous 
Issue DateTitleAuthor(s)
2000Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiationLing, C.H. ; Ang, C.H.; Ang, D.S. 
Aug-1995Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET'sLing, C.H. ; Ang, D.S. ; Tan, S.E.
1-Dec-1996Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET'sAng, D.S. ; Ling, C.H. 
1996Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitorsLing, C.H. ; Ooi, J.A.; Ang, D.S. 
15-Feb-1996Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitanceLing, C.H. ; Ang, D.S. ; Dutoit, M.
Nov-2001Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear regionAng, D.S. ; Lun, Z. ; Ling, C.H. 
Jul-1994Hot-electron degradation in NMOSFET's: Results from temperature annealLing, C.H. ; Ah, L.K.; Choi, W.K. ; Tan, S.E.; Ang, D.S. 
2001On the dominant interface trap generation process during hot-carrier stressingAng, D.S. ; Ling, C.H. 
Sep-1999On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stressAng, D.S. ; Ling, C.H. 
Jul-1995Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping currentLing, C.H. ; Tan, S.E.; Ang, D.S. 
Jun-1995Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature annealsAng, D.S. ; Ling, C.H. ; Yeow, Y.T.
Mar-1997The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitorsLing, C.H. ; Ang, D.S. ; Ooi, J.A.
1999The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFET'sAng, D.S. ; Ling, C.H.