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	Issue Date	Title	Author(s)
	2013	Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks	Duttagupta, S.; Ma, F.-J. ; Lin, S.F.; Mueller, T.; Aberle, A.G. ; Hoex, B.
	2012	State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cells	Duttagupta, S.; Lin, F. ; Shetty, K.D.; Wilson, M.; Ma, F.-J. ; Lin, J. ; Aberle, A.G. ; Hoex, B.
	2010	Study on SiGe nanowire shape engineering and Ge condensation	Ma, F.-J. ; Chia, B.S.; Rustagi, S.C.; Samudr, G.C.
	2008	Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport	Zhao, H.; Rustagi, S.C.; Singh, N.; Ma, F.-J. ; Samudra, G.S. ; Budhaaraju, K.D.; Manhas, S.K.; Tung, C.H.; Lo, G.Q.; Baccarani, G.; Kwong, D.L.
	2015	The impact of surface damage region and edge recombination on the effective lifetime of silicon wafers at low illumination conditions	Hameiri Z.; Ma, F.-J.
	2015	Three-dimensional numerical analysis of hybrid heterojunction silicon wafer solar cells with heterojunction rear point contacts	Ling Z.P. ; Duttagupta S. ; Ma F. ; Mueller T. ; Aberle A.G. ; Stangl R.

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