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YOO WON JONG
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Showing results 41 to 57 of 57
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Issue Date
Title
Author(s)
Jan-2006
Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers
Bera, M.K.
;
Chakraborty, S.
;
Das, R.
;
Dalapati, G.K.
;
Chattopadhyay, S.
;
Samanta, S.K.
;
Yoo, W.J.
;
Chakraborty, A.K.
;
Butenko, Y.
;
Šiller, L.
;
Hunt, M.R.C.
;
Saha, S.
;
Maiti, C.K.
2003
Reliability characterization of organic ultra low k film using ramp voltage breakdown
Krishnamoorthy, A.
;
Murthy, B.R.
;
Yiang, K.Y.
;
Yoo, W.J.
2003
Reliability improvement to copper damascene structures using buried capping layer
Yiang, K.Y.
;
Yoo, W.J.
;
Krishnamoorthy, A.
2004
Reliability improvement using buried capping layer in advanced interconnects
Yiang, K.Y.
;
Mok, T.S.
;
Yoo, W.J.
;
Krishnamoorthy, A.
2001
RHEED and XPS studies of the decomposition of silicon dioxide by the bombardment of metal ions
Wang, S.J.
;
Ong, C.K.
;
Xu, S.Y.
;
Chen, P.
;
Chai, J.W.
;
Tjiu, W.C.
;
Pan, J.S.
;
Huan, A.C.H.
;
Feng, W.
;
Lim, J.S.
;
Yoo, W.J.
;
Choi, W.K.
May-2004
Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
Zhu, S.
;
Yu, H.Y.
;
Whang, S.J.
;
Chen, J.H.
;
Shen, C.
;
Zhu, C.
;
Lee, S.J.
;
Li, M.F.
;
Chan, D.S.H.
;
Yoo, W.J.
;
Du, A.
;
Tung, C.H.
;
Singh, J.
;
Chin, A.
;
Kwong, D.L.
Nov-2005
Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory application
Samanta, S.K.
;
Tan, Z.Y.L.
;
Yoo, W.J.
;
Samudra, G.
;
Lee, S.
;
Bera, L.K.
;
Balasubramanian, N.
14-Feb-2005
Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories
Chen, J.H.
;
Yoo, W.J.
;
Chan, D.S.H.
;
Tang, L.-J.
Jan-2005
Self-assembly of Ni nanocrystals on HfO2 and N -assisted Ni confinement for nonvolatile memory application
Tan, Z.
;
Samanta, S.K.
;
Yoo, W.J.
;
Lee, S.
10-May-2006
Simulation of trapping properties of high κ material as the charge storage layer for flash memory application
Yeo, Y.N.
;
Wang, Y.Q.
;
Samanta, S.K.
;
Yoo, W.J.
;
Samudra, G.
;
Gao, D.
;
Chong, C.C.
10-May-2006
Simulation of trapping properties of high κ material as the charge storage layer for flash memory application
Yeo, Y.N.
;
Wang, Y.Q.
;
Samanta, S.K.
;
Yoo, W.J.
;
Samudra, G.
;
Gao, D.
;
Chong, C.C.
2006
Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Du, A.
;
Tung, C.-H.
;
Samudra, G.S.
;
Yoo, W.-J.
;
Balasubramanian, N.
;
Yeo, Y.-C.
Sep-2004
Study of leakage mechanisms of the copper/Black Diamond™ damascene process
Yiang, K.Y.
;
Guo, Q.
;
Yoo, W.J.
;
Krishnamoorthy, A.
2004
Study of process dependent reliability in SiOC dielectric interconnects and film
Mok, T.S.
;
Yoo, W.J.
;
Krishnamoorthy, A.
24-Apr-2007
Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
Tan, K.-M.
;
Liow, T.-Y.
;
Lee, R.T.P.
;
Chui, K.-J.
;
Tung, C.-H.
;
Balasubramanian, N.
;
Samudra, G.S.
;
Yoo, W.-J.
;
Yeo, Y.-C.
Feb-2005
Three-dimensional metal gate-high-Κ-GOI CMOSFETs on 1-poly-6-metal 0.18-μm Si devices
Yu, D.S.
;
Chin, A.
;
Liao, C.C.
;
Lee, C.F.
;
Cheng, C.F.
;
Li, M.F.
;
Yoo, W.J.
;
McAlister, S.P.
12-Sep-2005
Tungsten nanocrystals embedded in high- k materials for memory application
Samanta, S.K.
;
Yoo, W.J.
;
Samudra, G.
;
Tok, E.S.
;
Bera, L.K.
;
Balasubramanian, N.