Browsing by Author YOO WON JONG

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Showing results 38 to 57 of 57 < previous 
Issue DateTitleAuthor(s)
12-Feb-2009Nonvolatile Flash Memory Device and Method for Producing Dielectric Oxide Nanodots on Silicon DioxideCHEN JINGHAO ; YOO WON JONG ; CHAN SIU HUNG DANIEL 
Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
2005Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retentionLai, C.H.; Chin, A. ; Chiang, K.C.; Yoo, W.J. ; Cheng, C.F.; McAlister, S.P.; Chi, C.C.; Wu, P.
Jan-2006Rapid thermal oxidation of Ge-rich Si1-xGex heterolayersBera, M.K.; Chakraborty, S.; Das, R.; Dalapati, G.K.; Chattopadhyay, S.; Samanta, S.K. ; Yoo, W.J. ; Chakraborty, A.K.; Butenko, Y.; Šiller, L.; Hunt, M.R.C.; Saha, S.; Maiti, C.K.
2003Reliability characterization of organic ultra low k film using ramp voltage breakdownKrishnamoorthy, A.; Murthy, B.R.; Yiang, K.Y.; Yoo, W.J. 
2003Reliability improvement to copper damascene structures using buried capping layerYiang, K.Y.; Yoo, W.J. ; Krishnamoorthy, A.
2004Reliability improvement using buried capping layer in advanced interconnectsYiang, K.Y.; Mok, T.S.; Yoo, W.J. ; Krishnamoorthy, A.
2001RHEED and XPS studies of the decomposition of silicon dioxide by the bombardment of metal ionsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Chai, J.W.; Tjiu, W.C.; Pan, J.S.; Huan, A.C.H.; Feng, W.; Lim, J.S.; Yoo, W.J. ; Choi, W.K. 
May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
Nov-2005Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory applicationSamanta, S.K. ; Tan, Z.Y.L.; Yoo, W.J. ; Samudra, G. ; Lee, S. ; Bera, L.K.; Balasubramanian, N.
14-Feb-2005Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memoriesChen, J.H. ; Yoo, W.J. ; Chan, D.S.H. ; Tang, L.-J.
Jan-2005Self-assembly of Ni nanocrystals on HfO2 and N -assisted Ni confinement for nonvolatile memory applicationTan, Z.; Samanta, S.K. ; Yoo, W.J. ; Lee, S. 
10-May-2006Simulation of trapping properties of high κ material as the charge storage layer for flash memory applicationYeo, Y.N.; Wang, Y.Q.; Samanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Gao, D.; Chong, C.C.
10-May-2006Simulation of trapping properties of high κ material as the charge storage layer for flash memory applicationYeo, Y.N.; Wang, Y.Q.; Samanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Gao, D.; Chong, C.C.
2006Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancementLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Du, A.; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Balasubramanian, N.; Yeo, Y.-C. 
Sep-2004Study of leakage mechanisms of the copper/Black Diamond™ damascene processYiang, K.Y.; Guo, Q.; Yoo, W.J. ; Krishnamoorthy, A.
2004Study of process dependent reliability in SiOC dielectric interconnects and filmMok, T.S.; Yoo, W.J. ; Krishnamoorthy, A.
24-Apr-2007Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
Feb-2005Three-dimensional metal gate-high-Κ-GOI CMOSFETs on 1-poly-6-metal 0.18-μm Si devicesYu, D.S.; Chin, A. ; Liao, C.C.; Lee, C.F.; Cheng, C.F.; Li, M.F. ; Yoo, W.J. ; McAlister, S.P.
12-Sep-2005Tungsten nanocrystals embedded in high- k materials for memory applicationSamanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Tok, E.S. ; Bera, L.K.; Balasubramanian, N.