Browsing by Author YOO WON JONG

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 32 to 51 of 57 < previous   next >
Issue DateTitleAuthor(s)
2005Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function differenceYu, D.S.; Chin, A. ; Wu, C.H.; Li, M.-F. ; Zhu, C. ; Wang, S.J.; Yoo, W.J. ; Hung, B.F.; McAlister, S.P.
2005Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory applicationWang, Y.Q.; Singh, P.K.; Yoo, W.J. ; Yeo, Y.C. ; Samudra, G. ; Chin, A.; Hwang, W.S.; Chen, J.H. ; Wang, S.J.; Kwong, D.-L.
Jul-2005Low noise RF MOSFETs on flexible plastic substratesKao, H.L.; Chin, A. ; Hung, B.F.; Lee, C.F.; Lai, J.M.; McAlister, S.P.; Samudra, G.S. ; Yoo, W.J. ; Chi, C.C.
Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
2005Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retentionChin, A. ; Laio, C.C.; Chen, C.; Chiang, K.C.; Yu, D.S.; Yoo, W.J. ; Samudra, G.S. ; Wang, T.; Hsieh, I.J.; McAlister, S.P.; Chi, C.C.
2004Metallization and dielectric reliability in Cu interconnects: Effect of cap layers and surface treatmentsKrishnamoorthy, A.; Vairagar, A.V.; Yiang, K.Y.; Mhaisalkar, S.G.; Yoo, W.J. 
12-Feb-2009Nonvolatile Flash Memory Device and Method for Producing Dielectric Oxide Nanodots on Silicon DioxideCHEN JINGHAO ; YOO WON JONG ; CHAN SIU HUNG DANIEL 
Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
2005Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retentionLai, C.H.; Chin, A. ; Chiang, K.C.; Yoo, W.J. ; Cheng, C.F.; McAlister, S.P.; Chi, C.C.; Wu, P.
Jan-2006Rapid thermal oxidation of Ge-rich Si1-xGex heterolayersBera, M.K.; Chakraborty, S.; Das, R.; Dalapati, G.K.; Chattopadhyay, S.; Samanta, S.K. ; Yoo, W.J. ; Chakraborty, A.K.; Butenko, Y.; Šiller, L.; Hunt, M.R.C.; Saha, S.; Maiti, C.K.
2003Reliability characterization of organic ultra low k film using ramp voltage breakdownKrishnamoorthy, A.; Murthy, B.R.; Yiang, K.Y.; Yoo, W.J. 
2003Reliability improvement to copper damascene structures using buried capping layerYiang, K.Y.; Yoo, W.J. ; Krishnamoorthy, A.
2004Reliability improvement using buried capping layer in advanced interconnectsYiang, K.Y.; Mok, T.S.; Yoo, W.J. ; Krishnamoorthy, A.
2001RHEED and XPS studies of the decomposition of silicon dioxide by the bombardment of metal ionsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Chai, J.W.; Tjiu, W.C.; Pan, J.S.; Huan, A.C.H.; Feng, W.; Lim, J.S.; Yoo, W.J. ; Choi, W.K. 
May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
Nov-2005Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory applicationSamanta, S.K. ; Tan, Z.Y.L.; Yoo, W.J. ; Samudra, G. ; Lee, S. ; Bera, L.K.; Balasubramanian, N.
14-Feb-2005Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memoriesChen, J.H. ; Yoo, W.J. ; Chan, D.S.H. ; Tang, L.-J.
Jan-2005Self-assembly of Ni nanocrystals on HfO2 and N -assisted Ni confinement for nonvolatile memory applicationTan, Z.; Samanta, S.K. ; Yoo, W.J. ; Lee, S. 
10-May-2006Simulation of trapping properties of high κ material as the charge storage layer for flash memory applicationYeo, Y.N.; Wang, Y.Q.; Samanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Gao, D.; Chong, C.C.
10-May-2006Simulation of trapping properties of high κ material as the charge storage layer for flash memory applicationYeo, Y.N.; Wang, Y.Q.; Samanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Gao, D.; Chong, C.C.