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YOO WON JONG
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Showing results 23 to 42 of 57
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Issue Date
Title
Author(s)
2005
Impact of buried capping layer on electrical stablity of advanced interconnects
Yiang, K.Y.
;
Yoo, W.J.
;
Krishnamoorthy, A.
2005
Impact of buried capping layer on TDDB physics of advanced interconnects
Yiang, K.Y.
;
Yoo, W.J.
;
Krishnamoorthy, A.
;
Tang, L.J.
Jan-2002
In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching
Kok, K.W.
;
Yoo, W.J.
;
Sooriakumar, K.
10-May-2006
Integrated process of photoresist trimming and dielectric hard mask etching for sub-50 nm gate patterning
Bliznetsov, V.
;
Kumar, R.
;
Lin, H.
;
Ang, K.-W.
;
Yoo, W.J.
;
Du, A.
21-Jul-2003
Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method
Yiang, K.Y.
;
Yoo, W.J.
;
Guo, Q.
;
Krishnamoorthy, A.
Jul-2004
Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
Chen, J.
;
Yoo, W.J.
;
Tan, Z.Y.L.
;
Wang, Y.
;
Chan, D.S.H.
Jul-2005
Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
Hwang, W.S.
;
Chen, J.
;
Yoo, W.J.
;
Bliznetsov, V.
Sep-2002
Investigation of in situ trench etching process and Bosch process for fabricating high-aspect-ratio beams for microelectromechanical systems
Kok, K.W.
;
Yoo, W.J.
;
Sooriakumar, K.
;
Pan, J.S.
;
Lee, E.Y.
2006
Investigation of wet etching properties and annealing effects of Hf-based high-k materials
Chen, J.
;
Jong Yoo, W.
;
Chan, D.S.H.
2005
Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference
Yu, D.S.
;
Chin, A.
;
Wu, C.H.
;
Li, M.-F.
;
Zhu, C.
;
Wang, S.J.
;
Yoo, W.J.
;
Hung, B.F.
;
McAlister, S.P.
2005
Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
Wang, Y.Q.
;
Singh, P.K.
;
Yoo, W.J.
;
Yeo, Y.C.
;
Samudra, G.
;
Chin, A.
;
Hwang, W.S.
;
Chen, J.H.
;
Wang, S.J.
;
Kwong, D.-L.
Jul-2005
Low noise RF MOSFETs on flexible plastic substrates
Kao, H.L.
;
Chin, A.
;
Hung, B.F.
;
Lee, C.F.
;
Lai, J.M.
;
McAlister, S.P.
;
Samudra, G.S.
;
Yoo, W.J.
;
Chi, C.C.
Oct-2004
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
Zhu, S.
;
Yu, H.Y.
;
Chen, J.D.
;
Whang, S.J.
;
Chen, J.H.
;
Shen, C.
;
Zhu, C.
;
Lee, S.J.
;
Li, M.F.
;
Chan, D.S.H.
;
Yoo, W.J.
;
Du, A.
;
Tung, C.H.
;
Singh, J.
;
Chin, A.
;
Kwong, D.L.
2005
Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retention
Chin, A.
;
Laio, C.C.
;
Chen, C.
;
Chiang, K.C.
;
Yu, D.S.
;
Yoo, W.J.
;
Samudra, G.S.
;
Wang, T.
;
Hsieh, I.J.
;
McAlister, S.P.
;
Chi, C.C.
2004
Metallization and dielectric reliability in Cu interconnects: Effect of cap layers and surface treatments
Krishnamoorthy, A.
;
Vairagar, A.V.
;
Yiang, K.Y.
;
Mhaisalkar, S.G.
;
Yoo, W.J.
12-Feb-2009
Nonvolatile Flash Memory Device and Method for Producing Dielectric Oxide Nanodots on Silicon Dioxide
CHEN JINGHAO
;
YOO WON JONG
;
CHAN SIU HUNG DANIEL
Nov-2004
Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performance
Chen, J.H.
;
Wang, Y.Q.
;
Yoo, W.J.
;
Yeo, Y.-C.
;
Samudra, G.
;
Chan, D.S.H.
;
Du, A.Y.
;
Kwong, D.-L.
2005
Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention
Lai, C.H.
;
Chin, A.
;
Chiang, K.C.
;
Yoo, W.J.
;
Cheng, C.F.
;
McAlister, S.P.
;
Chi, C.C.
;
Wu, P.
Jan-2006
Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers
Bera, M.K.
;
Chakraborty, S.
;
Das, R.
;
Dalapati, G.K.
;
Chattopadhyay, S.
;
Samanta, S.K.
;
Yoo, W.J.
;
Chakraborty, A.K.
;
Butenko, Y.
;
Šiller, L.
;
Hunt, M.R.C.
;
Saha, S.
;
Maiti, C.K.
2003
Reliability characterization of organic ultra low k film using ramp voltage breakdown
Krishnamoorthy, A.
;
Murthy, B.R.
;
Yiang, K.Y.
;
Yoo, W.J.