Browsing by Author YOO WON JONG

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Issue DateTitleAuthor(s)
Mar-2005A novel program-erasable high-k AlN-Si MIS capacitorLai, C.H.; Chin, A.; Hung, B.F.; Cheng, C.F.; Yoo, W.J. ; Li, M.F. ; Zhu, C. ; McAlister, S.P.; Kwong, D.-L.
2006Chemical analysis of etching residues in metal gate stack for CMOS processWan, S.H.; Hui, H.N.; Won, J.Y. ; Bliznetsov, V.
2005Chemical vapor deposition of germanium nanocrystals on hafnium oxide for non-volatile memory applicationsWang, Y.Q.; Chen, J.H. ; Yoo, W.J. ; Yeo, Y.-C. 
2006Chemically assisted formation of nanocrystals for micro-electronics applicationTan, Z.; Gupta, R.; Samanta, S.K. ; Lee, S. ; Won, J.Y. 
12-Mar-2001Crystalline zirconia oxide on silicon as alternative gate dielectricsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Tjiu, W.C.; Chai, J.W.; Huan, A.C.H.; Yoo, W.J. ; Lim, J.S.; Feng, W.; Choi, W.K. 
Jul-2004Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patternsTan, K.M.; Yoo, W.J. ; Ma, H.H.H. ; Li, F.; Chan, L.
Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
2005Effect of electric field on chemical bonds of carbon-doped silicon oxide as evidenced by in situ Fourier transform infrared spectroscopyYiang, K.Y.; Yoo, W.J. ; Krishnamoorthy, A.
Oct-2005Effect of porosity on electrical stability of hydrocarbon polymeric low-k dielectricYiang, K.Y.; Yoo, W.J. ; Krishnamoorthy, A.
2004Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate DielectricChen, J. ; Yoo, W.J. ; Chan, D.S.H. ; Kwong, D.-L.
Jan-2006Effects of N2, O2, and Ar plasma treatments on the removal of crystallized HfO2 filmChen, J. ; Yoo, W.J. ; Chan, D.S.H. 
2002Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching processChong, D.; Yoo, W.J. ; Chan, L.; See, A.
2004Electric field-enhanced degradation of porous methylsilsesquioxane polymer as observed by in situ FTIRSYiang, K.Y.; Yoo, W.J. ; Krishnamoorthy, A.
Mar-2001Electrical properties of crystalline YSZ films on silicon as alternative gate dielectricsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Tjiu, W.C.; Huan, A.C.H.; Yoo, W.J. ; Lim, J.S.; Feng, W.; Choi, W.K. 
Aug-2004Enhancement of adhesion strength of Cu layer on single and multi-layer dielectric film stack in Cu/low k multi-level interconnectsBalakumar, S.; Wong, G.; Tsang, C.F.; Hara, T.; Yoo, W.J. 
Sep-2004Enhancement of adhesion strength of Cu seed layer with different thickness in Cu/low-k multilevel interconnectsWang, G.; Jong, Y.W. ; Balakumar, S.; Seah, C.H.; Hara, T.
2005Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystalsSamanta, S.K. ; Singh, P.K.; Yoo, W.J. ; Samudra, G. ; Yeo, Y.-C. ; Bera, L.K.; Balasubramanian, N.
1-Jul-2005Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devicesWang, Y.Q.; Chen, J.H. ; Yoo, W.J. ; Yeo, Y.-C. ; Chin, A.; Du, A.Y.
28-Jun-2004Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory deviceWang, Y.Q.; Chen, J.H. ; Yoo, W.J. ; Yeo, Y.-C. ; Kim, S.J. ; Gupta, R.; Tan, Z.Y.L.; Kwong, D.-L.; Du, A.Y.; Balasubramanian, N.
Jul-2003Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etchingChen, J. ; Tan, K.M.; Wu, N.; Yoo, W.J. ; Chan, D.S.H.