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YOO WON JONG
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Showing results 2 to 21 of 57
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Issue Date
Title
Author(s)
Mar-2005
A novel program-erasable high-k AlN-Si MIS capacitor
Lai, C.H.
;
Chin, A.
;
Hung, B.F.
;
Cheng, C.F.
;
Yoo, W.J.
;
Li, M.F.
;
Zhu, C.
;
McAlister, S.P.
;
Kwong, D.-L.
2006
Chemical analysis of etching residues in metal gate stack for CMOS process
Wan, S.H.
;
Hui, H.N.
;
Won, J.Y.
;
Bliznetsov, V.
2005
Chemical vapor deposition of germanium nanocrystals on hafnium oxide for non-volatile memory applications
Wang, Y.Q.
;
Chen, J.H.
;
Yoo, W.J.
;
Yeo, Y.-C.
2006
Chemically assisted formation of nanocrystals for micro-electronics application
Tan, Z.
;
Gupta, R.
;
Samanta, S.K.
;
Lee, S.
;
Won, J.Y.
12-Mar-2001
Crystalline zirconia oxide on silicon as alternative gate dielectrics
Wang, S.J.
;
Ong, C.K.
;
Xu, S.Y.
;
Chen, P.
;
Tjiu, W.C.
;
Chai, J.W.
;
Huan, A.C.H.
;
Yoo, W.J.
;
Lim, J.S.
;
Feng, W.
;
Choi, W.K.
Jul-2004
Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns
Tan, K.M.
;
Yoo, W.J.
;
Ma, H.H.H.
;
Li, F.
;
Chan, L.
Sep-2006
Drive-current enhancement in FinFETs using gate-induced stress
Tan, K.-M.
;
Liow, T.-Y.
;
Lee, R.T.P.
;
Tung, C.-H.
;
Samudra, G.S.
;
Yoo, W.-J.
;
Yeo, Y.-C.
2005
Effect of electric field on chemical bonds of carbon-doped silicon oxide as evidenced by in situ Fourier transform infrared spectroscopy
Yiang, K.Y.
;
Yoo, W.J.
;
Krishnamoorthy, A.
Oct-2005
Effect of porosity on electrical stability of hydrocarbon polymeric low-k dielectric
Yiang, K.Y.
;
Yoo, W.J.
;
Krishnamoorthy, A.
2004
Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate Dielectric
Chen, J.
;
Yoo, W.J.
;
Chan, D.S.H.
;
Kwong, D.-L.
Jan-2006
Effects of N2, O2, and Ar plasma treatments on the removal of crystallized HfO2 film
Chen, J.
;
Yoo, W.J.
;
Chan, D.S.H.
2002
Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process
Chong, D.
;
Yoo, W.J.
;
Chan, L.
;
See, A.
2004
Electric field-enhanced degradation of porous methylsilsesquioxane polymer as observed by in situ FTIRS
Yiang, K.Y.
;
Yoo, W.J.
;
Krishnamoorthy, A.
Mar-2001
Electrical properties of crystalline YSZ films on silicon as alternative gate dielectrics
Wang, S.J.
;
Ong, C.K.
;
Xu, S.Y.
;
Chen, P.
;
Tjiu, W.C.
;
Huan, A.C.H.
;
Yoo, W.J.
;
Lim, J.S.
;
Feng, W.
;
Choi, W.K.
Aug-2004
Enhancement of adhesion strength of Cu layer on single and multi-layer dielectric film stack in Cu/low k multi-level interconnects
Balakumar, S.
;
Wong, G.
;
Tsang, C.F.
;
Hara, T.
;
Yoo, W.J.
Sep-2004
Enhancement of adhesion strength of Cu seed layer with different thickness in Cu/low-k multilevel interconnects
Wang, G.
;
Jong, Y.W.
;
Balakumar, S.
;
Seah, C.H.
;
Hara, T.
2005
Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals
Samanta, S.K.
;
Singh, P.K.
;
Yoo, W.J.
;
Samudra, G.
;
Yeo, Y.-C.
;
Bera, L.K.
;
Balasubramanian, N.
1-Jul-2005
Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices
Wang, Y.Q.
;
Chen, J.H.
;
Yoo, W.J.
;
Yeo, Y.-C.
;
Chin, A.
;
Du, A.Y.
28-Jun-2004
Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device
Wang, Y.Q.
;
Chen, J.H.
;
Yoo, W.J.
;
Yeo, Y.-C.
;
Kim, S.J.
;
Gupta, R.
;
Tan, Z.Y.L.
;
Kwong, D.-L.
;
Du, A.Y.
;
Balasubramanian, N.
Jul-2003
Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching
Chen, J.
;
Tan, K.M.
;
Wu, N.
;
Yoo, W.J.
;
Chan, D.S.H.