Browsing by Author KIM SUN-JUNG

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Showing results 14 to 26 of 26 < previous 
Issue DateTitleAuthor(s)
Aug-2004Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectricKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Zhu, C. ; Yu, M.B.; Narayanan, B.; Chin, A.; Kwong, D.-L.
Nov-2005Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF applicationYu, M.B.; Xiong, Y.Z.; Kim, S.-J. ; Balakumar, S.; Zhu, C. ; Li, M.-F. ; Cho, B.-J. ; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
Jul-2003Lanthanide (Tb)-doped HfO2 for high-density MIM capacitorsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A.; Kwong, D.-L.
Sep-2005Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriersKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, S.J. ; Cho, B.J. ; Li, M.F. ; Yu, X.; Zhu, C. ; Chin, A.; Kwong, D.-L.
1-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
1-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
1999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
1999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
2000Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate biasAng, Chew-Hoe; Ling, Chung-Ho ; Cheng, Zhi-Yuan ; Kim, Sun-Jung ; Cho, Byung-Jin 
Apr-2001Reliability of thin gate oxides irradiated under X-ray lithography conditionsCho, B.J. ; Kim, S.J. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Yu, X.; Li, M.-F. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Rustagi, S.C.; Chin, A.; Kwong, D.-L.
2003Voltage and Temperature Dependence of Capacitance of High-K HfO 2 MIM Capacitors: A Unified Understanding and PredictionZhu, C. ; Hu, H.; Yu, X.; Kim, S.J. ; Chin, A.; Li, M.F. ; Cho, B.J. ; Kwong, D.L.