Browsing by Author WEE THYE SHEN,ANDREW

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Showing results 447 to 466 of 511 < previous   next >
Issue DateTitleAuthor(s)
11-Nov-2008Tailoring the electron affinity and electron emission of diamond (100) 2 × 1 by surface functionalization using an organic semiconductorQi, D. ; Gao, X. ; Wang, L. ; Chen, S. ; Loh, K.P. ; Wee, A.T.S. 
22-Feb-2007Tailoring wettability change on aligned and patterned carbon nanotube films for selective assemblyLi, P.; Lim, X. ; Zhu, Y. ; Yu, T.; Ong, C.-K. ; Shen, Z.; Wee, A.T.-S. ; Sow, C.-H. 
2009Temperature dependence of solvation forces as measured in atomic force microscopyLim, L.T.W.; Wee, A.T.S. ; O'Shea, S.J.
2009Temperature-dependent transition from injection-limited to space-charge-limited current in metal-organic diodesZheng, Y. ; Wee, A.T.S. ; Troadec, C.; Chandrasekhar, N.
23-Feb-2010Template-directed molecular assembly on silicon carbide nanomesh: Comparison between CuPc and pentaceneChen, S. ; Chen, W. ; Huanh, H. ; Gao, X. ; Qi, D. ; Wang, Y.; Wee, A.T.S. 
2006Terrace width dependence of cobalt silicide nucleation on Si(111)- (7×7)Zilani, M.A.K. ; Xu, H. ; Wang, X.-S. ; Wee, A.T.S. 
15-May-2001The alloying effect of Ni on the corrosion behavior of melt-spun Mg-Ni ribbonsYao, H.B.; Li, Y. ; Wee, A.T.S. ; Chai, J.W.; Pan, J.S. 
1-May-2001The evolution of 3 × 3, 6 × 6, √3 × √3R30° and 6√3 × 6√3R30° superstructures on 6H-SiC (0 0 0 1) surfaces studied by reflection high energy electron diffractionXie, X.N. ; Wang, H.Q. ; Wee, A.T.S. ; Loh, K.P. 
15-Feb-2004The formation of Ge nanocrystals in a metal-insulator-semiconductor structure and its memory effectHeng, C.L.; Liu, Y.J. ; Wee, A.T.S. ; Finstad, T.G.
5-Dec-2008The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understandingYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Dong, G.; Chan, L.; Srinivasan, M.P. 
1993The interaction between CO and YBa2Cu3Ox as studied by TG/DTA, FTIR, and XPSLin, J. ; Neoh, K.G. ; Li, N. ; Tan, T.C. ; Wee, A.T.S. ; Huan, A.C.H. ; Tan, K.L. 
2004The interaction of C 60 with Si(111) and Co/Si(111)Zilani, M.A.K. ; Xu, H. ; Wang, X.S. ; Wee, A.T.S. 
2001The investigation of surface topography development in Si(001) and Si(111) during SIMS depth profilingLau, G.S.; Tok, E.S. ; Wee, A.T.S. ; Liu, R. ; Lim, S.L. 
28-Mar-2013The Molecule-Metal InterfaceKoch, N.; Ueno, N.; Wee, A.T.S. 
2013The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopyDu, Y.; Kumar, A.; Pan, H.; Zeng, K. ; Wang, S.; Yang, P. ; Wee, A.T.S. 
4-Jun-2001The structural and electronic properties of (AlN)x(C2)1-x and (AlN)x(BN)1-x alloysZheng, J.-C. ; Wang, H.-Q. ; Huan, C.H.A. ; Wee, A.T.S. 
2000The use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusionLiu, R. ; Wee, A.T.S. ; Liu, L. ; Hao, G. 
21-Aug-2013Themed issue on carbon bioelectronicsAbidian, M.R.; Wee, A.T.S. ; Malliaras, G.G.
2012Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructureSun, J.-T. ; Wee, A.T.S. ; Feng, Y.P. 
2005Thermal confinement of advanced semiconductor substrates during laser annealingPey, K.L.; Ong, K.K.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.; Yeo, K.L.