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Issue DateTitleAuthor(s)
2003Defects and surfactant action of antimony on GaAs and GaAs 1-xNxon GaAs [100] by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Wicaksono, S.; Liu, R. ; Wee, A.T.S. 
Aug-2001Degradation effect of a ZnO layer on ZnS: Comparison between a Monte Carlo simulation and experimental Auger and CL measurementsDong, G.; Liangzhen, C.; Rong, L.; Wee, A.T.S. 
24-Nov-2010Delocalized π state between molecules through a surface confined pseudodihydrogen bondChen, L. ; Li, H.; Wee, A.T.S. 
2008Deoxidation of graphene oxide nanosheets to extended graphenites by "unzipping" eliminationChua, L.-L. ; Wang, S. ; Chia, P.-J. ; Chen, L. ; Zhao, L.-H.; Chen, W. ; Wee, A.T.-S. ; Ho, P.K.-H. 
2007Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometryChanbasha, A.R.; Wee, A.T.S. 
Mar-2006Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy O2 + secondary-ion-mass spectrometryChanbasha, A.R.; Wee, A.T.S. 
Oct-1999Determination of multilayer relaxations of the Cu(210) stepped surface by calculation of LEED intensitiesGuo, Y.P. ; Tan, K.C.; Wee, A.T.S. ; Huan, C.H.A. 
1-Aug-2004Determination of nitrogen composition in GaNxAs1-x epilayer on GaAsFan, W.J.; Yoon, S.F.; Cheah, W.K.; Loke, W.K.; Ng, T.K.; Wang, S.Z.; Liu, R. ; Wee, A. 
Jan-1995Development of chemical beam epitaxy for the deposition of gallium nitrideKingsley, C.R.; Whitaker, T.J.; Wee, A.T.S. ; Jackman, R.B.; Foord, J.S.
2007Development of highly efficient and high speed X-ray detectors using modern nanomaterialsCholewa, M. ; Lau, S.P.; Xingyu, G. ; Wee, A.T.S. ; Polak, W.; Lekki, J.; Stachura, Z.; Moser, H.O. 
7-Nov-2008Disorder beneath epitaxial graphene on SiC(0001): An x-ray absorption studyGao, X. ; Chen, S. ; Liu, T. ; Chen, W. ; Wee, A.T.S. ; Nomoto, T.; Yagi, S.; Soda, K.; Yuhara, J.
2006Dopant activation in subamorphized silicon upon laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.
2006Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.
Apr-2003Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surfacePrice, R.W.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Woods, N.J.; Zhang, J.
11-Dec-2000Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrixJie, Y.X. ; Xiong, Y.N.; Wee, A.T.S. ; Huan, C.H.A. ; Ji, W. 
18-May-2006Effect of cobalt doping concentration on the structural and magnetic properties of Fe3O4Tripathy, D. ; Adeyeye, A.O. ; Piramanayagam, S.N.; Mah, C.S.; Gao, X. ; Wee, A.T.S. 
27-May-2010Effect of fluorination on the molecular packing of perfluoropentacene and pentacene ultrathin films on Ag (111)Wong, S.L.; Huang, H. ; Huang, Y.L.; Wang, Y.Z.; Gao, X.Y. ; Suzuki, T.; Chen, W. ; Wee, A.T.S. 
25-Jan-2006Effect of functional group (fluorine) of aromatic thiols on electron transfer at the molecule-metal interfaceChen, W. ; Wang, L. ; Huang, C.; Lin, T.T.; Gao, X.Y. ; Loh, K.P. ; Chen, Z.K.; Wee, A.T.S. 
27-Oct-2003Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structureHo, V.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Tay, M.S.; Antoniadis, D.A.; Fitzgerald, E.A.; Du, A.Y.; Tung, C.H.; Liu, R. ; Wee, A.T.S. 
Apr-1999Effect of heat treatment on the corrosion behavior of amorphous Mg-Ni-Nd alloysKam, C.H.; Li, Y. ; Ng, S.C. ; Wee, A. ; Pan, J.S. ; Jones, H.