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Browsing by Author WEE THYE SHEN,ANDREW

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Issue DateTitleAuthor(s)
26-Mar-20071.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Zhang, D.H.; Ng, B.K.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
Oct-1999(2×1) Oxygen superstructure on Cu(210) surface studied by quantitative LEED analysis and STMTan, K.C.; Guo, Y.P. ; Wee, A.T.S. ; Huan, C.H.A. 
1-Jun-20046H-SiC(0 0 0 1) phase transition: Evolution of the (6 × 6) magic clustersTok, E.S. ; Ong, W.J.; Wee, A.T.S. 
Jan-1994A comparative study of the initial oxygen and water reactions on germanium and silicon using simsWee, A.T.S. ; Huan, C.H.A. ; Thong, P.S.P.; Tan, K.L. 
1997A microstructural study on the surface and interface of CdTe/CdS solar cellsLi, K.; Wee, A.T.S. ; Lin, J. ; Tan, K.L. ; Zhou, L. ; Li, S.F.Y. ; Feng, Z.C.; Chou, H.C.; Kamra, S.; Rohatgi, A.
15-Oct-2010A nanosegregant approach to superwettable and water-attracting surfacesXie, X.N. ; Lim, S.X. ; Wang, Y.; Gao, X. ; Lee, K.K.; Sow, C.H. ; Chen, X. ; Loh, K.P. ; Wee, A.T.S. 
17-Sep-2007A new scenario in probe local oxidation: Transient pressure-wave-assisted ionic spreading and oxide pattern formationXie, X.N. ; Chung, H.J. ; Liu, Z.J.; Yang, S.-W.; Sow, C.H. ; Wee, A.T.S. 
20-Jun-1997A surface and interface study on the InSb/GaAs heterostructuresLi, K.; Wee, A.T.S. ; Lin, J. ; Lee, K.K.; Watt, F. ; Tan, K.L. ; Feng, Z.C.; Webb, J.B.
11-Nov-2004A surface chemistry route to molybdenum sulfide and germanide films using the single-source precursor tetrakis(diethylaminodithiocarbomato)molybdate(IV)Ouyang, T.; Loh, K.P. ; Zhang, H. ; Vittal, J.J. ; Vetrichelvan, M. ; Chen, W. ; Gao, X. ; Wee, A.T.S. 
21-Jan-2011A synchrotron-based photoemission study of the MoO3Co interfaceWang, Y.-Z.; Yang, M. ; Qi, D.-C. ; Chen, S. ; Chen, W. ; Wee, A.T.S. ; Gao, X.-Y. 
15-Mar-2007Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7Zilani, M.A.K. ; Xu, H. ; Sun, Y.Y. ; Wang, X.-S. ; Wee, A.T.S. 
1-Jun-1997AES analysis of nitridation of Si(100) by 2-10 keV N+ 2 ion beamsPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
Dec-1996AES analysis of silicon nitride formation by 10 keV N+ and N+ 2 ion implantationPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
2009Aggregates-induced dynamic negative differential resistance in conducting organic filmsXie, X.N. ; Wang, J. ; Loh, K.P. ; Wee, A.T.S. 
1-Dec-1995An alternative method for determining the transmission function of secondary ion mass spectrometersLow, M.H.S.; Huan, C.H.A. ; Wee, A.T.S. ; Tan, K.L. 
Dec-2004An investigation of structure, magnetic properties and magnetoresistance of Ni films prepared by sputteringYi, J.B. ; Zhou, Y.Z.; Ding, J. ; Chow, G.M. ; Dong, Z.L.; White, T.; Gao, X. ; Wee, A.T.S. ; Yu, X.J. 
Jan-1994An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometryWee, A.T.S. ; Huan, C.H.A. ; Tan, K.L. ; Tan, R.S.K.
1-Jun-2006Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Ma, B.S.; Ng, T.K.; Liu, R. ; Wee, A.T.S. 
20-Oct-2001Annealing effects of tantalum thin films sputtered on [001] silicon substrateLiu, L. ; Gong, H. ; Wang, Y. ; Wang, J. ; Wee, A.T.S ; Liu, R. 
29-May-2000Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A.; Chan, L.; Lu, Y.F.; Song, W.D.; Chua, L.H.
Showing results 1 to 20 of 511  next >