Browsing by Author WEE THYE SHEN,ANDREW

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Issue DateTitleAuthor(s)
Sep-2004Critical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V: Results of a CCQM pilot studySeah, M.P.; Spencer, S.J.; Bensebaa, F.; Vickridge, I.; Danzebrink, H.; Krumrey, M.; Gross, T.; Oesterle, W.; Wendler, E.; Rheinländer, B.; Azuma, Y.; Kojima, I.; Suzuki, N.; Suzuki, M.; Tanuma, S.; Moon, D.W.; Lee, H.J.; Cho, H.M.; Chen, H.Y.; Wee, A.T.S. ; Osipowicz, T. ; Pan, J.S.; Jordaan, W.A.; Hauert, R.; Klotz, U.; Van Der Marel, C.; Verheijen, M.; Tamminga, Y.; Jeynes, C.; Bailey, P.; Biswas, S.; Falke, U.; Nguyen, N.V.; Chandler-Horowitz, D.; Ehrstein, J.R.; Muller, D.; Dura, J.A.
1999Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixtureLim, S.F.; Wee, A.T.S. ; Lin, J. ; Chua, D.H.C.
20-Jan-2002Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor depositionFeng, Z.C.; Yang, T.R.; Liu, R. ; Wee, A.T.S. 
27-Jun-2012CVD graphene as interfacial layer to engineer the organic donor-acceptor heterojunction interface propertiesZhong, S.; Zhong, J.Q.; Mao, H.Y. ; Wang, R.; Wang, Y. ; Qi, D.C. ; Loh, K.P. ; Wee, A.T.S. ; Chen, Z.K. ; Chen, W. 
23-Mar-2006Cycloadditions on diamond (100) 2 × 1: Observation of lowered electron affinity due to hydrocarbon adsorptionOuyang, T.; Gao, X. ; Qi, D. ; Wee, A.T.S. ; Loh, K.P. 
2003Defects and surfactant action of antimony on GaAs and GaAs 1-xNxon GaAs [100] by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Wicaksono, S.; Liu, R. ; Wee, A.T.S. 
Aug-2001Degradation effect of a ZnO layer on ZnS: Comparison between a Monte Carlo simulation and experimental Auger and CL measurementsDong, G.; Liangzhen, C.; Rong, L.; Wee, A.T.S. 
24-Nov-2010Delocalized π state between molecules through a surface confined pseudodihydrogen bondChen, L. ; Li, H.; Wee, A.T.S. 
2008Deoxidation of graphene oxide nanosheets to extended graphenites by "unzipping" eliminationChua, L.-L. ; Wang, S. ; Chia, P.-J. ; Chen, L. ; Zhao, L.-H.; Chen, W. ; Wee, A.T.-S. ; Ho, P.K.-H. 
2007Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometryChanbasha, A.R.; Wee, A.T.S. 
Mar-2006Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy O2 + secondary-ion-mass spectrometryChanbasha, A.R.; Wee, A.T.S. 
Oct-1999Determination of multilayer relaxations of the Cu(210) stepped surface by calculation of LEED intensitiesGuo, Y.P. ; Tan, K.C.; Wee, A.T.S. ; Huan, C.H.A. 
1-Aug-2004Determination of nitrogen composition in GaNxAs1-x epilayer on GaAsFan, W.J.; Yoon, S.F.; Cheah, W.K.; Loke, W.K.; Ng, T.K.; Wang, S.Z.; Liu, R. ; Wee, A. 
Jan-1995Development of chemical beam epitaxy for the deposition of gallium nitrideKingsley, C.R.; Whitaker, T.J.; Wee, A.T.S. ; Jackman, R.B.; Foord, J.S.
2007Development of highly efficient and high speed X-ray detectors using modern nanomaterialsCholewa, M. ; Lau, S.P.; Xingyu, G. ; Wee, A.T.S. ; Polak, W.; Lekki, J.; Stachura, Z.; Moser, H.O. 
7-Nov-2008Disorder beneath epitaxial graphene on SiC(0001): An x-ray absorption studyGao, X. ; Chen, S. ; Liu, T. ; Chen, W. ; Wee, A.T.S. ; Nomoto, T.; Yagi, S.; Soda, K.; Yuhara, J.
2006Dopant activation in subamorphized silicon upon laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.
2006Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.
Apr-2003Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surfacePrice, R.W.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Woods, N.J.; Zhang, J.
11-Dec-2000Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrixJie, Y.X. ; Xiong, Y.N.; Wee, A.T.S. ; Huan, C.H.A. ; Ji, W.