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Issue DateTitleAuthor(s)
Nov-2012Anomalous scaling behaviour of cobalt cluster size distributions on graphite, epitaxial graphene and carbon-rich (6√3 × 6√3)R30°Poon, S.W. ; Wee, A.T.S. ; Tok, E.S. 
2000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
15-Mar-1996Argon incorporation and silicon carbide formation during low energy argon-ion bombardment of Si(100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
15-Dec-1996Argon incorporation and surface compositional changes in InP(100) due to low-energy Ar+ ion bombardmentPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
21-Sep-1997ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
Nov-1998Atomic force microscopy investigation of the O2 +-induced surface topography of InPPan, J.S. ; Tay, S.T.; Huan, C.H.A. ; Wee, A.T.S. 
Jan-2005Atomic force microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)Chen, W. ; Loh, K.P. ; Lin, M.; Liu, R. ; Wee, A.T.S. 
23-Oct-2003Atomic scale oxidation of silicon nanoclusters on silicon carbide surfacesChen, W. ; Xie, X.N. ; Xu, H. ; Wee, A.T.S. ; Loh, K.P. 
10-Dec-2005Atomic structure of the 6H-SiC(0 0 0 1) nanomeshChen, W. ; Xu, H. ; Liu, L. ; Gao, X. ; Qi, D. ; Peng, G. ; Tan, S.C. ; Feng, Y. ; Loh, K.P. ; Wee, A.T.S. 
Apr-2004Atomic-scale structure of the fivefold surface of an AlPdMn quasicrystal: A quantitative x-ray photoelectron diffraction analysisZheng, J.-C. ; Huan, C.H.A. ; Wee, A.T.S. ; Van Hove, M.A.; Fadley, C.S.; Shi, F.J.; Rotenberg, E.; Barman, S.R.; Paggel, J.J.; Horn, K.; Ebert, Ph.; Urban, K.
Jul-1998Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAsPan, J.S. ; Huan, C.H.A. ; Wee, A.T.S. ; Tan, H.S. ; Tan, K.L. 
2013Band gap tunable N-type molecules for organic field effect transistorsGlowatzki, H.; Sonar, P.; Singh, S.P.; Mak, A.M.; Sullivan, M.B.; Chen, W. ; Wee, A.T.S. ; Dodabalapur, A.
2010Band-bending at the graphene-sic interfaces: Effect of the substrateChen, W. ; Chen, S. ; Ni, Z.H.; Huang, H. ; Qi, D.C. ; Gao, X.Y. ; Shen, Z.X.; Wee, A.T.S. 
17-Sep-2008Band-like transport in surface-functionalized highly solution-processable graphene nanosheetsWang, S. ; Chia, P.-J. ; Chua, L.-L. ; Zhao, L.-H.; Png, R.-Q. ; Sivaramakrishnan, S. ; Zhou, M. ; Goh, R.G.-S. ; Friend, R.H. ; Wee, A.T.-S. ; Ho, P.K.-H. 
2015Bandgap tunability at single-layer molybdenum disulphide grain boundariesHuang Y.L. ; Chen Y. ; Zhang W. ; Quek S.Y. ; Chen C.-H.; Li L.-J.; Hsu W.-T.; Chang W.-H.; Zheng Y.J.; Chen W. ; Wee A.T.S. 
1-Apr-2007BEEM studies on metal high K-dielectric HfO2 interfacesZheng, Y. ; Troadec, C.; Wee, A.T.S. ; Pey, K.L.; O'Shea, S.J.; Chandrasekhar, N. 
9-Jul-2012Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantationWang, Y.; Zhang, D.H.; Chen, X.Z.; Jin, Y.J.; Li, J.H.; Liu, C.J. ; Wee, A.T.S. ; Zhang, S.; Ramam, A.
23-Dec-2008Bottom-up growth of epitaxial graphene on 6H-SiC(0001)Huang, H. ; Chen, W. ; Chen, S. ; Wee, A.T.S. 
11-Dec-1998Bromine etching of mesoscopic structures on Cu(210): A scanning tunneling microscopy studyWee, A.T.S. ; Fishlock, T.W.; Dixon, R.A.; Foord, J.S.; Egdell, R.G.; Pethica, J.B.
Dec-2007C60 Molecular chains on α-sexithiophene nanostripesZhang, H.L. ; Chen, W. ; Chen, L. ; Huang, H. ; Wang, X.S. ; Yuhara, J.; Wee, A.T.S.