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Issue DateTitleAuthor(s)
1-Jan-2011Interaction of copper with sulfur on the sulfur-terminated Si(1 1 1)-(7 × 7) surfaceZhang, Y.P. ; Yong, K.S.; Xu, G.Q. ; Gao, X.Y. ; Wang, X.-S. ; Wee, A.T.S. 
2007Interdiffusion in narrow InGaAsNGaAs quantum wellsLiu, W.; Zhang, D.H.; Huang, Z.M.; Wang, S.Z.; Yoon, S.F.; Fan, W.J.; Liu, C.J. ; Wee, A.T.S. 
9-Jul-2020Interfacial Oxygen-Driven Charge Localization and Plasmon Excitation in Unconventional SuperconductorsChi Sin Tang ; Xinmao Yin ; Shengwei Zeng ; Jing Wu; Ming Yang; Ping Yang ; Caozheng Diao ; Yuan Ping Feng ; Mark B. H. Breese ; Elbert E. M. Chia; Thirumalai Venkatesan ; Manish Chhowalla; Ariando Ariando ; Andrivo Rusydi ; Andrew T. S. Wee 
Feb-2009International Journal of Nanoscience: Guest editorialWee, A.T.S. ; Wan, A.C.A.; Feng, Y.P. ; Zhang, H.; Jalil, M.B.A. ; Valiyaveettil, S. 
5-Oct-2010Interplay of processing, morphological order, and charge-carrier mobility in polythiophene thin films deposited by different methods: Comparison of spin-cast, drop-cast, and inkjet-printed filmsWong, L.-Y. ; Png, R.-Q. ; Silva, F.B.S.; Chua, L.-L. ; Repaka, D.V.M.; Shi-Chen; Gao, X.-Y. ; Ke, L.; Chua, S.-J.; Wee, A.T.S. ; Ho, P.K.H. 
15-May-2006Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
2006Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxyFan, W.J.; Cheah, W.K.; Yoon, S.F.; Zhang, D.H.; Liu, R. ; Wee, A.T.S. 
28-Mar-2013Introduction to the Molecule-Metal InterfaceUeno, N.; Koch, N.; Wee, A.T.S. 
31-Jan-2000Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopyZhu, F.; Huan, C.H.A. ; Zhang, K.; Wee, A.T.S. 
Jan-2003Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profilingYeo, K.L.; Wee, A.T.S. ; Liu, R. ; Zhou, F.F.; See, A.
2002Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealingLoh, S.W.; Zhang, D.H.; Liu, R. ; Li, C.Y.; Wee, A.T.S. 
1-Mar-2005Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Ng, T.K.; Loke, W.K.; Zhang, D.H.; Mei, T.; Liu, R. ; Wee, A.T.S. 
1994Investigation of titanium silicide formation using secondary ion mass spectrometryWee, Andrew T.S. ; Huan, Alfred C.H. ; Thian, W.H.; Tan, K.L. ; Hogan, Royston
1-Nov-1999Investigation of tungsten incorporated amorphous carbon filmRusli; Yoon, S.F.; Yang, H.; Ahn, J.; Huang, Q.F.; Zhang, Q.; Guo, Y.P. ; Yang, C.Y. ; Teo, E.J. ; Wee, A.T.S. ; Huan, A.C.H. 
30-Apr-2001Ion-induced nitridation of GaAs(1 0 0) surfaceLi, Y.G.; Wee, A.T.S. ; Huan, C.H.A. ; Zheng, J.C. 
27-Oct-1997Ionization probability of Si+ ion emission from clean Si under Ar+ bombardmentLow, M.H.S.; Huan, C.H.A. ; Wee, A.T.S. ; Tan, K.L. 
Mar-2008Large area, rapid growth of two-dimensional ZnO nanosheets and their field emission performancesChin, K.C. ; Poh, C.K. ; Chong, G.L. ; Lin, J. ; Sow, C.H. ; Wee, A.T.S. 
26-Sep-2006Large damage threshold and small electron escape depth in X-ray absorption spectroscopy of a conjugated polymer thin filmChua, L.-L. ; Dipankar, M.; Sivaramakrishnan, S. ; Gao, X. ; Qi, D. ; Wee, A.T.S. ; Ho, P.K.H. 
29-Oct-2012Large room-temperature quantum linear magnetoresistance in multilayered epitaxial graphene: Evidence for two-dimensional magnetotransportSevak Singh, R.; Wang, X.; Chen, W. ; Ariando ; Wee, A.T.S. 
5-Jul-2007Large-scale synthesis of Fe3O4 nanosheets at low temperatureChin, K.C. ; Chong, G.L. ; Poh, C.K. ; Van Hui, L. ; Sow, C.H. ; Lin, J. ; Wee, A.T.S.