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Showing results 12 to 31 of 512 < previous   next >
Issue DateTitleAuthor(s)
1-Jun-1997AES analysis of nitridation of Si(100) by 2-10 keV N+ 2 ion beamsPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
Dec-1996AES analysis of silicon nitride formation by 10 keV N+ and N+ 2 ion implantationPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
2009Aggregates-induced dynamic negative differential resistance in conducting organic filmsXie, X.N. ; Wang, J. ; Loh, K.P. ; Wee, A.T.S. 
1-Dec-1995An alternative method for determining the transmission function of secondary ion mass spectrometersLow, M.H.S.; Huan, C.H.A. ; Wee, A.T.S. ; Tan, K.L. 
Dec-2004An investigation of structure, magnetic properties and magnetoresistance of Ni films prepared by sputteringYi, J.B. ; Zhou, Y.Z.; Ding, J. ; Chow, G.M. ; Dong, Z.L.; White, T.; Gao, X. ; Wee, A.T.S. ; Yu, X.J. 
Jan-1994An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometryWee, A.T.S. ; Huan, C.H.A. ; Tan, K.L. ; Tan, R.S.K.
1-Jun-2006Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Ma, B.S.; Ng, T.K.; Liu, R. ; Wee, A.T.S. 
20-Oct-2001Annealing effects of tantalum thin films sputtered on [001] silicon substrateLiu, L. ; Gong, H. ; Wang, Y. ; Wang, J. ; Wee, A.T.S ; Liu, R. 
29-May-2000Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A.; Chan, L.; Lu, Y.F.; Song, W.D.; Chua, L.H.
Nov-2012Anomalous scaling behaviour of cobalt cluster size distributions on graphite, epitaxial graphene and carbon-rich (6√3 × 6√3)R30°Poon, S.W. ; Wee, A.T.S. ; Tok, E.S. 
2000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
15-Mar-1996Argon incorporation and silicon carbide formation during low energy argon-ion bombardment of Si(100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
15-Dec-1996Argon incorporation and surface compositional changes in InP(100) due to low-energy Ar+ ion bombardmentPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
21-Sep-1997ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
Nov-1998Atomic force microscopy investigation of the O2 +-induced surface topography of InPPan, J.S. ; Tay, S.T.; Huan, C.H.A. ; Wee, A.T.S. 
Jan-2005Atomic force microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)Chen, W. ; Loh, K.P. ; Lin, M.; Liu, R. ; Wee, A.T.S. 
23-Oct-2003Atomic scale oxidation of silicon nanoclusters on silicon carbide surfacesChen, W. ; Xie, X.N. ; Xu, H. ; Wee, A.T.S. ; Loh, K.P. 
10-Dec-2005Atomic structure of the 6H-SiC(0 0 0 1) nanomeshChen, W. ; Xu, H. ; Liu, L. ; Gao, X. ; Qi, D. ; Peng, G. ; Tan, S.C. ; Feng, Y. ; Loh, K.P. ; Wee, A.T.S. 
Apr-2004Atomic-scale structure of the fivefold surface of an AlPdMn quasicrystal: A quantitative x-ray photoelectron diffraction analysisZheng, J.-C. ; Huan, C.H.A. ; Wee, A.T.S. ; Van Hove, M.A.; Fadley, C.S.; Shi, F.J.; Rotenberg, E.; Barman, S.R.; Paggel, J.J.; Horn, K.; Ebert, Ph.; Urban, K.
Jul-1998Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAsPan, J.S. ; Huan, C.H.A. ; Wee, A.T.S. ; Tan, H.S. ; Tan, K.L.