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KARUNASIRI,GAMANI
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Showing results 1 to 20 of 49
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Issue Date
Title
Author(s)
Jan-1999
Carbon nitride thin films deposited by nitrogen-ion-assisted KRF excimer ablation of graphite
Feng, L.Y.
;
Min, R.Z.
;
Qiao, N.H.
;
Feng, H.Z.
;
Chan, D.S.H.
;
Seng, L.T.
;
Yin, C.S.
;
Gamani, K.
;
Geng, C.
;
Kun, L.
1998
Characteristics of InGaAs quantum dot infrared photodetectors
Xu, S.J.
;
Chua, S.J.
;
Mei, T.
;
Wang, X.C.
;
Zhang, X.H.
;
Karunasiri, G.
;
Fan, W.J.
;
Wang, C.H.
;
Jiang, J.
;
Wang, S.
;
Xie, X.G.
1-Aug-1998
Characterization of titanium silicide by Raman spectroscopy for submicron IC processing
Lim, E.H.
;
Karunasiri, G.
;
Chua, S.J.
;
Shen, Z.X.
;
Wong, H.
;
Pey, K.L.
;
Lee, K.H.
;
Chan, L.
23-Nov-2000
Circuit for microbolometer bias-heating cancellation
Xu, Y.P.
;
Qian, X.B.
;
Karunasiri, G.
Apr-2000
Circuit model for quantum-well infrared photodetectors and its comparison with experiments
Chee, Y.H.
;
Karunasiri, G.
4-Jan-2000
Cmos gate architecture for integration of salicide process in sub 0.1. .muM devices
HO, CHAW SING
;
KARUNASIRI, R. P. G.
;
CHUA, SOO JIN
;
PEY, KIN LEONG
;
LEE, KONG HEAN
1997
Dependence of the composition of InAs1-xSbx on the mole fraction of In in the melt using LPE
Chatrath, V.
;
Chua, S.J.
;
Karunasiri, G.
;
Mao, Y.
1998
Design and analysis of a double barrier quantum well infrared photodetector
Tan, L.S.
;
Cheah, C.W.
;
Karunasiri, G.
;
Raman, A.
1998
Determination of thermal parameters of microbolometers using a single electrical measurement
Gu, X.
;
Karunasiri, G.
;
Chen, G.
;
Sridhar, U.
;
Xu, B.
Dec-1995
Doping dependence of intersubband transitions in Si1-xGex Si multiple quantum wells
Karunasiri, G.
;
Jin Chua, S.
;
Suk Park, J.
;
Wang, K.L.
8-Apr-1999
DUAL BAND INFRARED DETECTOR USING STEP MULTIQUANTUM WELLS WITH SUPERLATTICE BARRIERS
KARUNASIRI, GAMANI
;
CHUA, SOO-JIN
1997
Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
Ho, C.S.
;
Pey, K.L.
;
Wong, H.
;
Karunasirf, R.P.G.
;
Chua, S.J.
;
Lee, K.H.
;
Tang, Y.
;
Wong, S.M.
;
Chan, L.H.
2003
Effect of operating temperature on electrical and thermal properties of microbolometer infrared sensors
Karunasiri, G.
;
Ramakrishna, M.V.S.
;
Neuzil, P.
30-Nov-1996
Effect of presence and type of particulate reinforcement on the electrical conductivity of non-heat treatable aluminum
Gupta, M.
;
Karunasiri, G.
;
Lai, M.O.
1998
Effects of changing Al mole fraction on the performance of an InGaAlAs/InP DBRTD
Lim, C.H.
;
Chua, S.J.
;
Karunasiri, G.
2001
Effects of hydrostatic pressure on Raman scattering in Ge quantum dots
Teo, K.L.
;
Qin, L.
;
Noordin, I.M.
;
Karunasiri, G.
;
Shen, Z.X.
;
Schmidt, O.G.
;
Eberl, K.
;
Queisser, H.J.
1999
Electro-thermal modelling of infrared microemitters using PSPICE
Ravi Kiran, S.
;
Karunasiri, G.
1998
Extraction of thermal parameters of microbolometer infrared detectors using electrical measurement
Karunasiri, G.
;
Gu, X.
;
Chen, G.
;
Sridhar, U.
2-Nov-1995
Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy
Ramam, A.
;
Chua, S.J.
;
Karunasiri, G.
;
Vaya, P.R.
1-Feb-2000
Highly sensitive infrared temperature sensor using self-heating compensated microbolometers
Ramakrishna, M.V.S.
;
Karunasiri, G.
;
Neuzil, P.
;
Sridhar, U.
;
Zeng, W.J.