Browsing by Author KARUNASIRI,GAMANI

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Issue DateTitleAuthor(s)
1999Electro-thermal modelling of infrared microemitters using PSPICERavi Kiran, S.; Karunasiri, G. 
1998Extraction of thermal parameters of microbolometer infrared detectors using electrical measurementKarunasiri, G. ; Gu, X.; Chen, G. ; Sridhar, U. 
2-Nov-1995Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxyRamam, A. ; Chua, S.J. ; Karunasiri, G. ; Vaya, P.R. 
1-Feb-2000Highly sensitive infrared temperature sensor using self-heating compensated microbolometersRamakrishna, M.V.S.; Karunasiri, G. ; Neuzil, P.; Sridhar, U.; Zeng, W.J.
1-Feb-2000Highly sensitive infrared temperature sensor using self-heating compensated microbolometersRamakrishna, M.V.S.; Karunasiri, G. ; Neuzil, P.; Sridhar, U.; Zeng, W.J.
27-Feb-1998Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formationHo, C.S.; Pey, K.L.; Wong, H.; Karunasiri, R.P.G. ; Chua, S.J. ; Lee, K.H.; Chan, L.H.
1999Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectorsLee, A.S.W.; Li, E.H.; Karunasiri, G. 
1999Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectorsLee, A.S.W.; Li, E.H.; Karunasiri, G. 
2001Measurement of the excited-state position of bound-to-bound quantum-well infrared detectorsZhou, L.; Chee, Y.H. ; Karunasiri, G. 
2000Mechanisms of intersubband transition in n-type III-V quantum well superlattice and improvement on absorption for TE polarized fieldCheah, C.W.; Karunasiri, G. ; Tan, L.S. 
2000Mechanisms of intersubband transition in n-type III-V quantum well superlattice and improvement on absorption for TE polarized fieldCheah, C.W.; Karunasiri, G. ; Tan, L.S. 
May-1998Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopyLim, E.H.; Karunasiri, G. ; Chua, S.J. ; Wong, H.; Pey, K.L.; Lee, K.H.
1995Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wellsKarunasiri, Gamani ; Shih, Robert; Chen, John
2001On-chip compensation of dark current in infrared focal plane arraysNg, M.W. ; Chee, Y.H.; Xu, Y.P. ; Karunasiri, G. 
2001On-chip compensation of dark current in infrared focal plane arraysNg, M.W. ; Chee, Y.H.; Xu, Y.P. ; Karunasiri, G. 
30-Jun-1998On-chip compensation of self-heating effects in microbolometer infrared detector arraysGu, X.; Karunasiri, G. ; Yu, J.; Chen, G. ; Sridhar, U.; Zeng, W.J.
30-Jun-1998On-chip compensation of self-heating effects in microbolometer infrared detector arraysGu, X.; Karunasiri, G. ; Yu, J.; Chen, G. ; Sridhar, U.; Zeng, W.J.
1999Performance of titanium and amorphous germanium microbolometer infrared detectorsRamakrishna, M.V.S.; Karunasiri, G. ; Sridhar, U. ; Chen, G. 
1995Progress of SiGe / Si quantum wells for infrared detectionGamani Karunasiri, R.P. ; Park, J.S.; Wang, K.L.
5-Dec-2000Pulsed laser salicidation for fabrication of ultra-thin silicides in sub-quarter micron devicesHO, CHAW SING; LEE, YUAN PING; LAP, CHAN; LU, YONG FENG ; KARUNASIRI, R.P.G.